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参数资料
| 型号： | APT40GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 188K |
| 代理商： | APT40GT60BR |
052-6222
Rev
C
1
1-
2008
Typical Performance Curves
APT40GT60BR
0
1000
2000
3000
4000
5000
0
25
50
75
100
125
0
1000
2000
3000
4000
5000
6000
7000
8000
0
10
20
30
40
50
0
500
1000
1500
2000
2500
3000
0
10 20 30
40 50
60 70
80 90
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0
10 20
30 40 50
60 70 80
90
0
25
50
75
100
125
150
175
200
0
10
20
30
40
50
60
70
80
90
0
10
20
30
40
50
60
70
80
90
100
0
10 20 30
40 50
60 70 80 90
0
50
100
150
200
250
300
0 10 20
30 40
50 60 70
80 90
0
5
10
15
20
25
0 10
20 30 40
50 60 70 80
90
V
GE =15V,TJ=125°C
V
GE =15V,TJ=25°C
V
CE = 400V
R
G = 5Ω
L = 100μH
V
CE = 400V
V
GE = +15V
R
G = 5Ω
V
CE = 400V
T
J = 25°C, or 125°C
R
G = 5Ω
L = 100μH
V
GE = 15V
V
CE = 400V
V
GE = +15V
R
G = 5Ω
V
CE = 400V
V
GE = +15V
R
G = 5Ω
R
G = 5Ω, L = 100
μ
H, V
CE = 400V
T
J = 125°C
T
J = 25°C
T
J = 125°C
T
J = 25°C
R
G = 5Ω, L = 100
μ
H, V
CE = 400V
T
J = 25 or 125°C,VGE = 15V
T
J = 125°C, VGE = 15V
T
J = 25°C, VGE = 15V
E
on2,80A
E
off,80A
E
on2,40A
E
off,40A
E
on2,20A
E
off,20A
V
CE = 400V
V
GE = +15V
T
J = 125°C
E
on2,80A
E
off,80A
E
on2,40A
E
off,40A
E
on2,20A
E
off,20A
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
t d(ON)
,TURN-ON
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
t d(OFF)
,TURN-OFF
DELA
Y
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
t r,
RISE
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
t r,
F
ALL
TIME
(ns)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
E
on2
,
TURN
ON
ENERGY
LOSS
(
μ
J)
I
CE, COLLECTOR-TO-EMITTER CURRENT (A)
FIGURE 14, Turn-Off Energy Loss vs Collector Current
E
OFF
,
TURN
OFF
ENERGY
LOSS
(
μ
J)
R
G, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs Gate Resistance
SWITCHING
ENERGY
LOSSES
(
μ
J)
T
J, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
SWITCHING
ENERGY
LOSSES
(
μ
J)
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