- 您现在的位置：买卖IC网 > PDF目录36713 > APT40GT60BR (MICROSEMI POWER PRODUCTS GROUP) 80 A, 600 V, N-CHANNEL IGBT, TO-247 PDF资料下载
参数资料
| 型号： | APT40GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 188K |
| 代理商： | APT40GT60BR |
Typical Performance Curves
APT40GT60BR
052-6222
Rev
C
1
1-
2008
0
10
20
30
40
50
60
70
80
25
35
45
55
65
75
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
10-5
10-4
10-3
10-2
10
1.0
-1
100
1000
10,000
100,000
0
10
20
30
40
50
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
F
MAX
,OPERA
TING
FREQUENCY
(kHz)
I
C, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
T
J = 125°C
T
C = 75°C
D = 50 %
V
CE = 400V
R
G = 1.0Ω
0.5
0.1
0.05
F
max
= min (f
max, f max2)
0.05
f
max1 = t
d(on) + tr + td(off) + tf
P
diss - P cond
E
on2 + E off
f
max2 =
P
diss =
T
J - T C
R θJC
C
oes
C
res
C
ies
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
75°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
C,
CAP
ACIT
ANCE
(pF)
0
25
50
75
100
125
150
175
200
0
100
200
300 400
500
600 700
V
CE, COLLECTOR-TO-EMITTER VOLTAGE
FIGURE 18, Minimum Switching Safe Operating Area
I C
,COLLECT
OR
CURRENT
(A)
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
.07172
.1434
.1451
.00157
.0040
0.1270
相关PDF资料 |
PDF描述 |
|---|---|
| APT40M35JVR | 93 A, 400 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M42JN | 86 A, 400 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M70B2VFR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APT40M40LVFRG | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| APT40M70LVFR | 57 A, 400 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
| APT40M35JVFR | 功能描述:MOSFET N-CH 400V 93A SOT-227 RoHS:是 类别:半导体模块 >> FET 系列:POWER MOS V® 标准包装:10 系列:* |
| APT40M35JVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M42BFN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 400V V(BR)DSS | 95A I(D) |
发布紧急采购，3分钟左右您将得到回复。