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参数资料
| 型号： | APT40GT60BR |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | IGBT 晶体管 |
| 英文描述： | 80 A, 600 V, N-CHANNEL IGBT, TO-247 |
| 封装： | TO-247, 3 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 188K |
| 代理商： | APT40GT60BR |
052-6222
Rev
C
1
1-
2008
Typical Performance Curves
APT40GT60BR
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
0
1
2
3
4
5
6
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
0
20 40 60 80 100 120 140 160 180 200
0
1
2
3
4
5
6
8
10
12
14
16
0
20
40
60
80
100
120
140
160
0
2
4
6
8
10
12
14
0
25
50
75
100
125
150
0
5
10
15
20
0
10
20
30
40
50
60
70
80
90
100
0
1
2
3
4
5
6
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T
J = 25°C.
250μs PULSE TEST
<0.5 % DUTY CYCLE
V
GE = 15V.
250μs PULSE TEST
<0.5 % DUTY CYCLE
I
C = 200A
I
C = 40A
I
C = 80A
I
C = 40A
I
C = 80A
13V
11V
6V
15V
I
C = 40A
T
J = 25°C
V
CE = 480V
V
CE = 300V
V
CE = 120V
T
J= 25°C
T
J= -55°C
V
GE = 15V
T
J= 55°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics (T
J
= 25°C)
I C
,COLLECT
OR
CURRENT
(A)
T
J= 25°C
T
J= 125°C
V
CE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 2, Output Characteristics (T
J
= 25°C)
I C
,COLLECT
OR
CURRENT
(A)
T
J= 125°C
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
I C
,COLLECT
OR
CURRENT
(A)
V
GE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
GATE CHARGE (nC)
FIGURE 4, Gate charge
V
GE
,GA
TE-T
O-EMITTER
VOL
TAGE
(V)
T
J, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
V
CE
,COLLECT
OR-T
O-EMITTER
VOL
TAGE
(V)
T
C, Case Temperature (°C)
FIGURE 8, DC Collector Current vs Case Temperature
I C
,DC
COLLECT
OR
CURRENT
(A)
0.75
0.80
0.85
0.90
0.95
1.00
1.05
1.10
-.50 -.25
0
25
50
75 100 125 150
T
J, JUNCTION TEMPERATURE
FIGURE 7, Threshold Voltage vs Junction Temperature
V
GS(TH)
,
THRESHOLD
VOL
TAGE
(NORMALIZED)
7V
8V
10V
I
C = 20A
9V
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相关代理商/技术参数 |
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|---|---|
| APT40GT60BRG | 功能描述:IGBT 600V 80A 345W TO247 RoHS:是 类别:分离式半导体产品 >> IGBT - 单路 系列:Thunderbolt IGBT® 标准包装:30 系列:GenX3™ IGBT 类型:PT 电压 - 集电极发射极击穿（最大）:1200V Vge, Ic时的最大Vce（开）:3V @ 15V，100A 电流 - 集电极 (Ic)（最大）:200A 功率 - 最大:830W 输入类型:标准 安装类型:通孔 封装/外壳:TO-247-3 供应商设备封装:PLUS247?-3 包装:管件 |
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| APT40M35JVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
| APT40M35PVR | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
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