参数资料
型号: APT50GF60JCU2
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 70 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, ISOTOP-4
文件页数: 1/6页
文件大小: 214K
代理商: APT50GF60JCU2
APT50GF60JCU2
APT
50GF60JCU2
Rev
0
September
,2009
www.microsemi.com
1- 6
ISOTOP
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
V
TC = 25°C
70
IC
Continuous Collector Current
TC = 90°C
50
ICM
Pulsed Collector Current
TC = 25°C
230
A
VGE
Gate – Emitter Voltage
±20
V
PD
Maximum Power Dissipation
TC = 25°C
277
W
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C
100A @ 500V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
K
E
C
G
VCES = 600V
IC = 50A @ Tc = 90°C
Application
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Brake switch
Features
Non Punch Through (NPT) Fast IGBT
-
Low voltage drop
-
Low tail current
-
Switching frequency up to 100 kHz
-
Low leakage current
-
RBSOA and SCSOA rated
Chopper SiC Schottky Diode
-
Zero reverse recovery
-
Zero forward recovery
-
Temperature Independent switching behavior
-
Positive temperature coefficient on VF
ISOTOP Package (SOT-227)
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
ISOTOP
Boost chopper
NPT IGBT
SiC chopper diode
K
C
G
E
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APT50GF60JU3 功能描述:IGBT 600V 75A 277W SOT227 RoHS:是 类别:半导体模块 >> IGBT 系列:- 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿(最大):600V Vge, Ic时的最大Vce(开):1.4V @ 15V,100A 电流 - 集电极 (Ic)(最大):430A 电流 - 集电极截止(最大):100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商设备封装:SOT-227B
APT50GF60LRD 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
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APT50GLQ65JU2 功能描述:POWER MODULE - IGBT 制造商:microsemi corporation 系列:- 零件状态:在售 IGBT 类型:沟槽型场截止 配置:升压斩波器 电压 - 集射极击穿(最大值):650V 电流 - 集电极(Ic)(最大值):80A 功率 - 最大值:220W 不同?Vge,Ic 时的?Vce(on):2.3V @ 15V,50A 电流 - 集电极截止(最大值):50μA 不同?Vce 时的输入电容(Cies):3.1nF @ 25V 输入:标准 NTC 热敏电阻:无 工作温度:-55°C ~ 175°C(TJ) 安装类型:底座安装 封装/外壳:SOT-227-4,miniBLOC 供应商器件封装:ISOTOP? 标准包装:1