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参数资料
| 型号： | APT94N65B2C3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 1/5页 |
| 文件大小： | 146K |
| 代理商： | APT94N65B2C3 |
T-Max
TM
050-8069
Rev
B
3-2009
650V
94A
APT94N65B2C3
APT94N65B2C3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
MAXIMUM RATINGS
All Ratings per die: T
C = 25°C unless otherwise specied.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS = 0V, ID = 500μA)
Drain-Source On-State Resistance 3 (V
GS = 10V, ID = 60A)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (V
DS = 600V, VGS = 0V, TC = 150°C)
Gate-Source Leakage Current (V
GS = ±20V, VDS = 0V)
Gate Threshold Voltage (V
DS = VGS, ID = 5.8mA)
Symbol
V
DSS
I
D
I
DM
V
GS
P
D
T
J,TSTG
T
L
dv/dt
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C = 25°C
Continuous Drain Current @ T
C = 100°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Total Power Dissipation @ T
C = 25°C
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C)
Avalanche Current 2
Repetitive Avalanche Energy 2
( Id = 7A, Vdd = 50V )
Single Pulse Avalanche Energy
( Id = 3.5A, Vdd = 50V )
UNIT
Volts
Amps
Volts
Watts
°C
V/ns
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
(DSS)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
UNIT
Volts
Ohms
μA
nA
Volts
APT94N65B2C3S(G)
650
94
60
282
20
415
-55 to 150
260
50
7
1
1800
Ultra Low R
DS(ON)
Low Miller Capacitance
Ultra Low Gate Charge, Qg
Avalanche Energy Rated
Extreme dv/dt Rated
Dual die (parallel)
Popular T-MAX Package
Super Junction MOSFET
MIN
TYP
MAX
650
0.03
0.035
1.0
50
100
±200
2.1
3
3.9
C
Power Semiconductors
O
O LMOS
"COOLMOS comprise a new family of transistors developed by Inneon Technologies AG. "COOLMOS" is a trade-
mark of Inneon Technologies AG."
G
D
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Microsemi Website - http://www.microsemi.com
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包装:散装 零件状态:上次购买时间 IGBT 类型:NPT 电压 - 集射极击穿（最大值）:650V 电流 - 集电极（Ic）（最大值）:135A 脉冲电流 - 集电极 (Icm):380A 不同?Vge，Ic 时的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 开关能量:* 输入类型:标准 栅极电荷:420nC 25°C 时 Td（开/关）值:29ns/226ns 测试条件:433V，95A，4.3 欧姆，15V 反向恢复时间（trr）:- 封装/外壳:SOT-227-4，miniBLOC 安装类型:底座安装 供应商器件封装:SOT-227 标准包装:1 |
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