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参数资料
型号： APT94N65B2C3
厂商： MICROSEMI POWER PRODUCTS GROUP
元件分类： JFETs
英文描述： 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： TMAX-3
文件页数： 2/5页
文件大小： 146K
代理商： APT94N65B2C3
050-8069
Rev
B
3-2009
DYNAMIC CHARACTERISTICS
APT94N65B2C3(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 3 (V
GS = 0V, IS = -94A)
Peak Diode Recovery dv/
dt
6
Reverse Recovery Time
(I
S = -94A,
di/
dt = 100A/μs)
Reverse Recovery Charge
(I
S = -94A,
di/
dt = 100A/μs)
Peak Recovery Current
(I
S = -94A,
di/
dt = 100A/μs)
Symbol
I
S
I
SM
V
SD
dv/
dt
t
rr
Q
rr
I
RRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN
TYP
MAX
47
141
0.9
1.2
50
960
1271
31
43
58
56
Symbol
R
θJC
R
θJA
MIN
TYP
MAX
0.15
31
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as P
AV = E
AR*f . Pulse width tp limited by Tj max.
3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specications and information contained herein.
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
T
j = 25°C
T
j = 125°C
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 4
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 5
Turn-off Switching Energy
Turn-on Switching Energy 5
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 300V
I
D = 94A @ 25°C
INDUCTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 94A @ 25°C
R
G = 4.3Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 94A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 94A, RG = 4.3Ω
4 See MIL-STD-750 Method 3471
5 Eon includes diode reverse recovery.
6 Maximum 125°C diode commutation speed = di/dt 600A/μs
MIN
TYP
MAX
13940
5200
229
580
72
234
32
59
498
167
2684
4448
3391
5082
UNIT
pF
nC
ns
μJ
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
10-5
10-4
10-3
10-2
0.1
Z
θ
JC
,THERMAL
IMPEDANCE
(°C/W)
0.3
D = 0.9
0.7
SINGLE PULSE
RECTANGULAR PULSE DURATION (SECONDS)
Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.5
0.1
0.05
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t
2
t2
t1
P
DM
Note:
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