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参数资料
| 型号： | APT94N65B2C3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 3/5页 |
| 文件大小： | 146K |
| 代理商： | APT94N65B2C3 |
050-8069
Rev
B
3-2009
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
(Watts)
T
J (°C)
T
C (°C)
Z
EXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
Z
EXT
0.0618
0.0885
0.0230
0.436
Typical Performance Curves
APT94N65B2C3(G)
0.6
0.7
0.8
0.9
1
1.1
1.2
-50
0
50
100
150
0.
.95
1
.05
1. 1
.15
-50
0
50
100
150
0.8
0.9
1
1.1
1.2
1.3
1.4
0
40
80
120
160
200
0
10
20
30
40
50
60
70
80
90
100
25
50
75
100
125
150
0
20
40
60
80
100
120
140
160
0
1
2
3
4
5
6
7
8
0
50
100
150
200
250
0
5
10
15
20
25
30
6.5V
4V
10 &15V
V
GS = 20V
T
J= 25°C
T
J= -55°C
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Low Voltage Output Characteristics
I C
,DRAIN
CURRENT
(A)
T
J= 125°C
V
GS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 12, Transfer Characteristics
I D
,DRAIN
CURRENT
(A)
T
C, CASE TEMPERATURE (C°)
FIGURE 6, Maximum Drain Current vs Case Temperature
I D
,DRAIN
CURRENT
(A)
I
D, DRAIN CURRENT (A)
FIGURE 13, R
DS(ON) vs Drain Current
I DR
,REVERSE
T
J, Junction Temperature (°C)
FIGURE 7, Breakdown Voltage vs Temperature
BV
DSS
,DRAIN-T
O-SOURCE
BREAKDOWN
VOL
TAGE
(NORMALIZED)
T
C, Case Temperature (°C)
FIGURE 9, Threshold Voltage vs Temperature
V
GS
(TH),
THRESHOLD
VOL
TAGE
(NORMALIZED)
0
0.5
1
1.5
2.0
2.5
3.0
-50
0
50
100
150
T
J, JUNCTION TEMPERATURE (C°)
FIGURE 8, On-Resistance vs Temperature
R
DS(ON)
,DRAIN-T
O-SOURCE
ON
RESIST
ANCE
(NORMALIZED)
4.5V
5.5V
6V
5V
V
GS = 10V
V
DS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
GS = 10V @ 47A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包装:散装 零件状态:上次购买时间 IGBT 类型:NPT 电压 - 集射极击穿（最大值）:650V 电流 - 集电极（Ic）（最大值）:135A 脉冲电流 - 集电极 (Icm):380A 不同?Vge，Ic 时的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 开关能量:* 输入类型:标准 栅极电荷:420nC 25°C 时 Td（开/关）值:29ns/226ns 测试条件:433V，95A，4.3 欧姆，15V 反向恢复时间（trr）:- 封装/外壳:SOT-227-4，miniBLOC 安装类型:底座安装 供应商器件封装:SOT-227 标准包装:1 |
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