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参数资料
| 型号： | APT94N65B2C3 |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 94 A, 650 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | TMAX-3 |
| 文件页数： | 4/5页 |
| 文件大小： | 146K |
| 代理商： | APT94N65B2C3 |
050-8069
Rev
B
3-2009
Typical Performance Curves
APT94N65B2C3(G)
0
2000
4000
6000
8000
10000
12000
14000
16000
18000
0
10
20
30
40
50
0
50
00
50
00
50
00
0
40
80
120
160
1
10
100
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
100
200
300
400
500
600
700
0
40
80
120
160
0
2
4
6
8
10
12
0
200
400
600
800
10
100
1,000
10,000
60,000
0
100
200
300
400
500
600
C
iss
T
J = =25°C
GRAPH REMOVED
V
DS= 480V
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 11, Capacitance vs Drain-To-Source Voltage
C,
CAP
ACIT
ANCE
(pF)
V
DS= 300V
Q
g, TOTAL GATE CHARGE (nC)
FIGURE 12, Gate Charges vs Gate-To-Source Voltage
V
GS
,GA
TE-T
O-SOURCE
VOL
TAGE
(VOL
TS)
I
D (A)
FIGURE 14, Delay Times vs Current
t d(on)
and
t
d(of
f)
(ns)
V
SD, SOURCE-TO-DRAIN VOLTAGE (V)
FIGURE 13, Source-Drain Diode Forward Voltage
I DR
,REVERSE
DRAIN
CURRENT
(A)
I
D (A)
FIGURE 15 , Rise and Fall Times vs Current
t r,
and
t
f
(ns)
R
G, GATE RESISTANCE (Ohms)
FIGURE 17, Switching Energy vs Gate Resistance
SWITCHING
ENERGY
(uJ)
0
2000
4000
6000
8000
10000
12000
0
25
50
75
100
125
150
I
D (A)
FIGURE 16, Switching Energy vs Current
SWITCHING
ENERGY
(
μ
J)
C
oss
C
rss
T
J= +150°C
I
D = 94A
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
d(on)
t
d(off)
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
E
on
E
off
V
DD = 400V
R
G = 5W
T
J = 125°C
L = 100μH
t
r
t
f
E
on
E
off
V
DD = 400V
I
D = 94A
T
J = 125°C
L = 100μH
E
ON includes
diode reverse recovery.
I D
,DRAIN
CURRENT
(A)
V
DS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 10, Maximum Safe Operating Area
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APT94N65B2C3_11 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Super Junction MOSFET |
| APT94N65B2C3G | 功能描述:MOSFET N-CH 650V 94A TO-247 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:CoolMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| APT94N65B2C6 | 制造商:Microsemi Corporation 功能描述:MOSFET N-CH 650V 95A T-MAX |
| APT95GR65B2 | 制造商:Microsemi Corporation 功能描述:IGBT 650V 208A 892W T-MAX 制造商:Microsemi Corporation 功能描述:POWER IGBT TRANSISTOR |
| APT95GR65JDU60 | 功能描述:IGBT NPT 650V 135A 446W Chassis Mount SOT-227 制造商:microsemi corporation 系列:- 包装:散装 零件状态:上次购买时间 IGBT 类型:NPT 电压 - 集射极击穿（最大值）:650V 电流 - 集电极（Ic）（最大值）:135A 脉冲电流 - 集电极 (Icm):380A 不同?Vge，Ic 时的?Vce（on）:2.4V @ 15V，95A 功率 - 最大值:446W 开关能量:* 输入类型:标准 栅极电荷:420nC 25°C 时 Td（开/关）值:29ns/226ns 测试条件:433V，95A，4.3 欧姆，15V 反向恢复时间（trr）:- 封装/外壳:SOT-227-4，miniBLOC 安装类型:底座安装 供应商器件封装:SOT-227 标准包装:1 |
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