参数资料
型号: APTGV50H60T3G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: IGBT 晶体管
英文描述: 80 A, 600 V, N-CHANNEL IGBT
封装: ROHS COMPLIANT, SP3, 25 PIN
文件页数: 4/9页
文件大小: 369K
代理商: APTGV50H60T3G
APTGV50H60T3G
A
P
TG
V
50H
60T3G
–Re
v
0
J
une
,20
07
www.microsemi.com
4-9
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Cies
Input Capacitance
2200
Coes
Output Capacitance
323
Cres
Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
200
pF
Qg
Total gate Charge
166
Qge
Gate – Emitter Charge
20
Qgc
Gate – Collector Charge
VGE = 15V
VBus = 300V
IC = 50A
100
nC
Td(on)
Turn-on Delay Time
40
Tr
Rise Time
9
Td(off)
Turn-off Delay Time
120
Tf
Fall Time
Inductive Switching (25°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7
12
ns
Td(on)
Turn-on Delay Time
42
Tr
Rise Time
10
Td(off)
Turn-off Delay Time
130
Tf
Fall Time
Inductive Switching (125°C)
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7
21
ns
Eon
Turn-on Switching Energy
Tj = 125°C
0.5
Eoff
Turn-off Switching Energy
VGE = 15V
VBus = 400V
IC = 50A
RG = 2.7
Tj = 125°C
1
mJ
RthJC
Junction to Case Thermal resistance
0.5
°C/W
2.2 Bottom diode characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
600
V
Tj = 25°C
25
IRM
Maximum Reverse Leakage Current
VR=600V
Tj = 125°C
500
A
IF
DC Forward Current
Tc = 80°C
30
A
IF = 30A
1.8
2.3
IF = 60A
2.1
VF
Diode Forward Voltage
IF = 30A
Tj = 125°C
1.5
V
Tj = 25°C
25
trr
Reverse Recovery Time
Tj = 125°C
160
ns
Tj = 25°C
35
Qrr
Reverse Recovery Charge
IF = 30A
VR = 400V
di/dt =200A/s
Tj = 125°C
480
nC
RthJC
Junction to Case Thermal resistance
1.2
°C/W
3. Temperature sensor
NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
T: Thermistor temperature
RT: Thermistor value at T
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