参数资料
型号: APTM120H140FT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 8 A, 1200 V, 1.68 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 3/5页
文件大小: 141K
代理商: APTM120H140FT1G
APTM120H140FT1G
APT
M
120H140FT
1
G
Rev
0
Decem
ber,
2007
www.microsemi.com
3 – 5
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
RthJC
Junction to Case Thermal Resistance
0.6
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque
Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
B 25/85
T25 = 298.15 K
3952
K
=
T
B
R
T
1
exp
25
85
/
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
APTM120H29F 34 A, 1200 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120H29F 34 A, 1200 V, 0.29 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120H57FT3 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120H57FT3 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120H57FT 17 A, 1200 V, 0.57 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTM120H29F 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM120H29FG 功能描述:PWR MODULE MOSFET 1200V 34A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120H57FT 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM120H57FT3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module
APTM120H57FT3G 功能描述:MOSFET MOD FULL BRIDGE 1200V SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*