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参数资料
| 型号： | APTM120H140FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 1200 V, 1.68 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 141K |
| 代理商： | APTM120H140FT1G |
APTM120H140FT1G
APT
M
120H140FT
1
G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
4 – 5
Typical Performance Curve
Low Voltage Output Characteristics
TJ=25°C
TJ=125°C
0
5
10
15
20
0
5
10
15
20
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=10V
Low Voltage Output Characteristics
4.5V
5V
0
2
4
6
8
10
12
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Drai
n
Cu
rren
t
(A)
VGS=6, 7, 8 &9V
TJ=125°C
Normalized RDS(on) vs. Temperature
0
0.5
1
1.5
2
2.5
3
25
50
75
100
125
150
TJ, Junction Temperature (°C)
R
DS
on
,
D
rai
n
to
S
o
u
rce
ON
resi
stan
c
e
VGS=10V
ID=7A
Transfert Characteristics
TJ=25°C
TJ=125°C
0
2
4
6
8
10
01
23
45
6
VGS, Gate to Source Voltage (V)
I D
,Drai
n
Cu
rren
t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
Gate Charge vs Gate to Source
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
0
40
80
120
160
Gate Charge (nC)
V
GS
,G
a
te
t
o
Sour
c
e
Volt
a
g
e
ID=7A
TJ=25°C
Ciss
Crss
Coss
10
100
1000
10000
0
50
100
150
200
VDS, Drain to Source Voltage (V)
C,
Capaci
tan
ce
(p
F
)
Capacitance vs Drain to Source Voltage
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