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参数资料
| 型号： | APTM120H140FT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 8 A, 1200 V, 1.68 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 141K |
| 代理商： | APTM120H140FT1G |
APTM120H140FT1G
APT
M
120H140FT
1
G
–
Rev
0
Decem
ber,
2007
www.microsemi.com
5 – 5
TJ=25°C
TJ=125°C
0
5
10
15
20
25
0
0.2
0.4
0.6
0.8
1
VSD, Source to Drain Voltage (V)
I SD
,Reverse
Drai
n
C
u
rren
t(A)
Drain Current vs Source to Drain Voltage
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120H29F | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
| APTM120H29FG | 功能描述:PWR MODULE MOSFET 1200V 34A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120H57FT | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Full - Bridge MOSFET Power Module |
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