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参数资料
| 型号： | APTM120U100D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 310K |
| 代理商： | APTM120U100D-A1N |
APTM120U100D-AlN
A
P
T
M
120U
100D
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lN
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0
J
ul
y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
1
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
4
mA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 58A
100
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±400
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.9
Coss
Output Capacitance
4.4
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.8
nF
Qg
Total gate Charge
1100
Qgs
Gate – Source Charge
128
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 116A
716
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
17
Td(off)
Turn-off Delay Time
245
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 116A
RG =1.2
62
ns
Eon
Turn-on Switching Energy
5
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2
4.6
mJ
Eon
Turn-on Switching Energy
9.2
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 116A, RG = 1.2
5.6
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 70°C
180
A
IF = 180A
2
2.5
IF = 360A
2.3
VF
Diode Forward Voltage
IF = 180A
Tj = 125°C
1.8
V
Tj = 25°C
370
trr
Reverse Recovery Time
IF = 180A
VR = 800V
di/dt = 800A/s
Tj = 125°C
500
ns
Tj = 25°C
3.9
Qrr
Reverse Recovery Charge
IF = 180A
VR = 800V
di/dt = 800A/s
Tj = 125°C
20.7
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120U100D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10DAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120U10DAG_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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