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参数资料
| 型号： | APTM120U100D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 3/6页 |
| 文件大小： | 310K |
| 代理商： | APTM120U100D-A1N |
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APT website – http://www.advancedpower.com
3 – 6
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.038
RthJC
Junction to Case
Series diode
0.22
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120U100D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10DAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120U10DAG_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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