- 您现在的位置：买卖IC网 > PDF目录57952 > APTM120U100D-A1N 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM120U100D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 6/6页 |
| 文件大小： | 310K |
| 代理商： | APTM120U100D-A1N |
APTM120U100D-AlN
A
P
T
M
120U
100D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
50
100
150
200
250
300
30
60
90
120
150
180
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
30
60
90
120
150
180
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
4
8
12
16
30
60
90
120
150
180
ID, Drain Current (A)
Sw
it
ch
in
gEne
rgy
(m
J)
VDS=800V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
4
8
12
16
20
24
024
68
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=116A
TJ=125°C
L=100H
Hard
switching
ZCS
0
25
50
75
100
125
150
175
30
50
70
90
110
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=1.2
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTM120UM70F-ALN | 171 A, 1200 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM120UM95F-ALN | 103 A, 1200 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20AM05FTG | 333 A, 200 V, 0.005 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTM20DAM04 | 372 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120U100D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10DAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120U10DAG_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
发布紧急采购，3分钟左右您将得到回复。