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参数资料
| 型号： | APTM120U100D-A1N |
| 元件分类： | JFETs |
| 英文描述： | 116 A, 1200 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 5/6页 |
| 文件大小： | 310K |
| 代理商： | APTM120U100D-A1N |
APTM120U100D-AlN
A
P
T
M
120U
100D
–A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
5 – 6
0.85
0.90
0.95
1.00
1.05
1.10
1.15
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
BV
DS
S,
D
rai
n
to
S
o
u
rce
B
reak
d
o
w
n
V
o
lt
ag
e
(
N
o
rm
a
li
z
e
d
)
Breakdown Voltage vs Temperature
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n
),
D
ra
in
t
o
S
o
u
rce
O
N
resi
st
an
ce
(N
or
m
a
li
ze
d)
VGS=10V
ID=58A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
Th
re
shol
d
V
o
lt
ag
e
(N
o
rma
li
ze
d
)
Maximum Safe Operating Area
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
e
n
t(
A
)
limited by RDSon
Single pulse
TJ=150°C
1200
Ciss
Crss
Coss
100
1000
10000
100000
0
102030
40
50
VDS, Drain to Source Voltage (V)
C
,C
a
p
aci
ta
n
ce
(
p
F
)
Capacitance vs Drain to Source Voltage
VDS=240V
VDS=600V
VDS=960V
0
2
4
6
8
10
12
14
0
300
600
900
1200
1500
Gate Charge (nC)
V
GS
,G
a
te
to
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=116A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120U100D-ALN | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10DAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120U10DAG_08 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:Single switch with Series diodes MOSFET Power Module |
| APTM120U10SA | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM120U10SAG | 功能描述:MOSFET N-CH 1200V 116A SP6 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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