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参数资料
| 型号： | APTM20UM04S-ALN |
| 元件分类： | JFETs |
| 英文描述： | 417 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 2/6页 |
| 文件大小： | 302K |
| 代理商： | APTM20UM04S-ALN |
APTM20UM04S-AlN
A
P
T
M
20U
M
04S
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A
lN
R
ev
0
J
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y,
2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
200
V
VGS = 0V,VDS = 200V
Tj = 25°C
500
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 160V
Tj = 125°C
2000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 208.5A
4
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
28.8
Coss
Output Capacitance
9.32
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.58
nF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
212
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 100V
ID = 417A
268
nC
Td(on)
Turn-on Delay Time
32
Tr
Rise Time
64
Td(off)
Turn-off Delay Time
88
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 133V
ID = 417A
RG = 1.2
116
ns
Eon
Turn-on Switching Energy
3396
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 133V
ID = 417A, RG = 1.2
3716
J
Eon
Turn-on Switching Energy
3744
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 133V
ID = 417A, RG = 1.2
3944
J
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
360
A
IF = 360A
1.1
1.15
IF = 720A
1.4
VF
Diode Forward Voltage
IF = 360A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 360A
VR = 133V
di/dt = 1000A/s
Tj = 125°C
60
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 360A
VR = 133V
di/dt = 1000A/s
Tj = 125°C
1500
nC
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