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参数资料
| 型号： | APTM20UM04S-ALN |
| 元件分类： | JFETs |
| 英文描述： | 417 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 3/6页 |
| 文件大小： | 302K |
| 代理商： | APTM20UM04S-ALN |
APTM20UM04S-AlN
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APT website – http://www.advancedpower.com
3 – 6
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
360
A
IF = 360A
1.1
1.15
IF = 720A
1.4
VF
Diode Forward Voltage
IF = 360A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 360A
VR = 133V
di/dt = 1000A/s
Tj = 125°C
60
ns
Tj = 25°C
360
Qrr
Reverse Recovery Charge
IF = 360A
VR = 133V
di/dt = 1000A/s
Tj = 125°C
1500
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.08
Series Diode
0.12
RthJC
Junction to Case
Parallel Diode
0.12
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
To heatsink
M6
3
5
Torque Mounting torque
For terminals
M5
2
3.5
N.m
Wt
Package Weight
280
g
Package outline
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