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参数资料
| 型号： | APTM20UM04S-ALN |
| 元件分类： | JFETs |
| 英文描述： | 417 A, 200 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-4 |
| 文件页数： | 6/6页 |
| 文件大小： | 302K |
| 代理商： | APTM20UM04S-ALN |
APTM20UM04S-AlN
A
P
T
M
20U
M
04S
–-
A
lN
R
ev
0
J
ul
y,
2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
0
100 200 300 400 500 600 700
ID, Drain Current (A)
t d(
o
n)
an
d
t
d(o
ff)
(n
s
)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
140
160
0
100
200
300
400
500
600
ID, Drain Current (A)
t r
a
nd
t
f(n
s
)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
0
100 200 300 400 500 600 700
ID, Drain Current (A)
E
on
a
nd
E
of
f(m
J
)
VDS=133V
RG=1.2
TJ=125°C
L=100H
Eon
Eoff
2
4
6
8
10
12
14
0
2.5
5
7.5
10
12.5
15
Gate Resistance (Ohms)
Sw
it
ch
in
g
En
e
rg
y
(m
J
)
Switching Energy vs Gate Resistance
VDS=133V
ID=417A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
50
100 150 200 250 300 350 400
ID, Drain Current (A)
Fr
e
que
nc
y
(
k
H
z
)
Operating Frequency vs Drain Current
VDS=133V
D=50%
RG=1.2
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t
(A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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