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参数资料
| 型号： | APTM50UM19S |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 3/7页 |
| 文件大小： | 286K |
| 代理商： | APTM50UM19S |
APTM50UM19S
A
PT
M
50U
M
19S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
3 – 7
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
100
A
IF = 100A
1.6
1.8
IF = 200A
1.9
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.4
V
Tj = 25°C
180
trr
Reverse Recovery Time
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
220
ns
Tj = 25°C
390
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
1450
nC
Thermal and package characteristics
Symbol Characteristic
Min
Typ
Max
Unit
Transistor
0.11
Series diode
0.46
RthJC
Junction to Case
Parallel diode
0.6
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
2500
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
M4
1.2
Torque Mounting torque
M6
3
5
N.m
Wt
Package Weight
400
g
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50UM19SG | 功能描述:MOSFET N-CH 500V 163A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50UM25S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM25SG | 功能描述:MOSFET N-CH 500V 149A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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