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参数资料
| 型号： | APTM50UM19S |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 6/7页 |
| 文件大小： | 286K |
| 代理商： | APTM50UM19S |
APTM50UM19S
A
PT
M
50U
M
19S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
6 – 7
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
Breakdown Voltage vs Temperature
BV
DS
S,
D
rai
n
t
o
So
ur
ce
B
rea
kd
ow
n
V
o
lt
ag
e
(
N
or
ma
li
zed
)
ON resistance vs Temperature
0.0
0.5
1.0
1.5
2.0
2.5
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
R
DS
(o
n)
,D
ra
in
t
o
S
o
u
rce
O
N
re
si
st
an
ce
(No
rm
a
li
ze
d
)
VGS=10V
ID=81.5A
Threshold Voltage vs Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
-50 -25
0
25 50 75 100 125 150
TC, Case Temperature (°C)
V
GS
(T
H
),
T
h
re
sh
ol
d
Vo
lt
a
g
e
(No
rm
al
iz
e
d
)
limited by RDSon
Maximum Safe Operating Area
100ms
10ms
1ms
100s
1
10
100
1000
1
10
100
1000
VDS, Drain to Source Voltage (V)
I D
,Dra
in
Cu
rre
n
t(A)
limited by R
DSon
Single pulse
TJ=150°C
Ciss
Crss
Coss
10
100
1000
10000
100000
0
10
20304050
VDS, Drain to Source Voltage (V)
C,
Ca
p
ac
ita
n
c
e(p
F
)
Capacitance vs Drain to Source Voltage
VCE=100V
VCE=250V
VCE=400V
0
2
4
6
8
10
12
14
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
V
GS
,
G
at
e
t
o
S
o
u
rce
V
o
lt
ag
e
(V
)
Gate Charge vs Gate to Source Voltage
ID=163A
TJ=25°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50UM19SG | 功能描述:MOSFET N-CH 500V 163A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50UM25S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM25SG | 功能描述:MOSFET N-CH 500V 149A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
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