- 您现在的位置：买卖IC网 > PDF目录48375 > APTM50UM19S 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET PDF资料下载
参数资料
| 型号： | APTM50UM19S |
| 元件分类： | JFETs |
| 英文描述： | 163 A, 500 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 7/7页 |
| 文件大小： | 286K |
| 代理商： | APTM50UM19S |
APTM50UM19S
A
PT
M
50U
M
19S
–
R
ev
1
M
ay,
2004
APT website – http://www.advancedpower.com
7 – 7
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
60
100
140
180
220
260
ID, Drain Current (A)
t d(
on)
an
d
t
d(
of
f)(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
60
100
140
180
220
260
ID, Drain Current (A)
t r
an
d
t
f(n
s
)
VDS=333V
RG=1
TJ=125°C
L=100H
0
50
100
150
200
250
300
350
400
0
20406080 100 120 140
ID, Drain Current (A)
F
req
ue
nc
y
(
k
H
z)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1
TJ=125°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,Re
v
ers
eDra
in
Cu
rre
n
t(A)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
20
60
100
140
180
220
260
ID, Drain Current (A)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
VDS=333V
RG=1
TJ=125°C
L=100H
Eon
Eoff
0
2
4
6
8
10
12
14
16
02.557.5
10
12.5
Gate Resistance (Ohms)
S
w
it
ch
in
g
E
n
er
g
y
(
m
J)
Switching Energy vs Gate Resistance
VDS=333V
ID=163A
TJ=125°C
L=100H
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
相关PDF资料 |
PDF描述 |
|---|---|
| APTML20UM18R010T1AG | 44 A, 200 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML50UM90R020T1AG | 52 A, 500 V, 0.108 ohm, N-CHANNEL, Si, POWER, MOSFET |
| APTML60U12R020T1AG | 45 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ARF1501 | VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| ARF1510 | 4 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM50UM19SG | 功能描述:MOSFET N-CH 500V 163A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM50UM25S | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Single switch Series & parallel diodes MOSFET Power Module |
| APTM50UM25SG | 功能描述:MOSFET N-CH 500V 149A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11FT1G | 功能描述:MOSFET MODULE PHASE LEG SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM60A11UT1G | 制造商:Microsemi Corporation 功能描述:POWER MOSFET TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。