- 您现在的位置：买卖IC网 > PDF目录381460 > AT49LV020 (Atmel Corp.) 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory(256K x 8单电源2.7V Battery-Voltage技术闪速存储器) PDF资料下载
参数资料
| 型号： | AT49LV020 |
| 厂商： | Atmel Corp. |
| 英文描述： | 256K x 8 Single 2.7-volt Battery-Voltage Flash Memory(256K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
| 中文描述： | 256K × 8单2.7伏电池电压快闪记忆体（256K × 8单电源为2.7V电池电压技术闪速存储器） |
| 文件页数： | 1/13页 |
| 文件大小： | 212K |
| 代理商： | AT49LV020 |
1
Features
Single Supply Voltage, Range 2.7V to 3.6V
Single Supply for Read and Write
Fast Read Access Time - 70 ns
Internal Program Control and Timer
8K Bytes Boot Block with Lockout
Fast Erase Cycle Time - 10 Seconds
Byte-by-byte Programming - 30 μs/Byte Typical
Hardware Data Protection
DATA Polling For End of Program Detection
Low Power Dissipation
– 25 mA Active Current
– 50 μA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49BV020 and the AT49LV020 are 3-volt-only, 2-megabit Flash memories
organized as 262,144 words of 8 bits each. Manufactured with Atmel's advanced non-
volatile CMOS technology, the devices offer access times to 70 ns with power dissipa-
tion of just 90 mW over the commercial temperature range. When the device is
deselected, the CMOS standby current is less than 50 μA.
To allow for simple in-system reprogrammability, the AT49BV/LV020 does not require
high input voltages for programming. Three-volt-only commands determine the read
and programming operation of the device. Reading data out of the device is similar to
reading from an EPROM. Reprogramming the AT49BV/LV020 is performed by eras-
ing the entire 2 megabits of memory and then programming on a byte by byte basis.
The typical byte programming time is a fast 30 μs. The end of a program cycle can be
optionally detected by the DATA polling feature. Once the end of a byte program cycle
has been detected, a new access for a read or program can begin. The typical num-
ber of program and erase cycles is in excess of 10,000 cycles.
Pin Configuration
2-megabit
(256K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV020
AT49LV020
Rev. 0678E
–
08/99
(continued)
Pin Name
Function
A0 - A17
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
I
I
I
I
A
A
A
N
V
W
A
VSOP Top View (8 x 14mm) or
TSOP Top View (8 x 20mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
相关PDF资料 |
PDF描述 |
|---|---|
| AT49BV040A | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory |
| AT49BV040A-70JI | LM4665 Boomer ® Audio Power Amplifier Series Filterless High Efficiency 1W Switching Audio Amplifier; Package: MICRO SMD; No of Pins: 9 |
| AT49BV040A-70TI | LM4665 Boomer ® Audio Power Amplifier Series Filterless High Efficiency 1W Switching Audio Amplifier; Package: MICRO SMD; No of Pins: 9 |
| AT49BV040A-70VI | LM4665 Boomer ® Audio Power Amplifier Series Filterless High Efficiency 1W Switching Audio Amplifier; Package: LLP; No of Pins: 10 |
| AT49BV040T | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49LV040-12JC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12JI | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12TC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| AT49LV040-12TI | 功能描述:IC FLASH 4MBIT 120NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT49LV040-12VC | 功能描述:闪存 4M bit RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。