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参数资料
| 型号： | ATF-331M4-TR2 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | MINIPAK-4 |
| 文件页数： | 10/16页 |
| 文件大小： | 212K |
| 代理商： | ATF-331M4-TR2 |
3
ATF-331M4 DC Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Idss [1]
Saturated Drain Current
Vds = 1.5 V, Vgs = 0V
mA
175
237
305
Vp[1]
Pinch-off Voltage
Vds = 1.5 V, Ids = 10% of Idss
V
-0.65
-0.5
-0.35
Id
Quiescent Bias Current
Vgs = -0.51 V, Vds = 4 V
mA
—
60
—
Gm[1]
Transconductance
Vds = 1.5 V, Gm = Idss/Vp
mmho
360
440
—
Igdo
Gate to Drain Leakage Current
Vgd = -5 V
A
—
1000
Igss
Gate Leakage Current
Vgd = Vgs = -4 V
A
—
42
600
NF
Noise Figure
f = 2 GHz
Vds = 4 V, Ids = 60 mA
dB
—
0.6
0.8
f = 900 MHz
Vds = 4 V, Ids = 60 mA
dB
—
0.5
—
Ga
Associated Gain
f = 2 GHz
Vds = 4 V, Ids = 60 mA
dB
13.5
15
16.5
f = 900 MHz
Vds = 4 V, Ids = 60 mA
dB
—
21
—
OIP3
Output 3rd Order
f = 2 GHz, 5 dBm Pout/Tone
Vds = 4 V, Ids = 60 mA
dBm
28.5
31
—
Intercept Point [3]
f = 900 MHz, 5 dBm Pout/Tone
Vds = 4 V, Ids = 60 mA
dBm
—
30.8
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 4 V, Ids = 60 mA
dBm
—
19
—
Output Power [3]
f = 900 MHz
Vds = 4 V, Ids = 60 mA
dBm
—
18
—
Notes:
1. Guaranteed at wafer probe level
2. Typical values are determined from a sample size of 349 parts from 4 wafers.
3. Measurements obtained using production test board described in Figure 5.
Input
50
Input
Transmission Line
Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.13
Γ_ang = 113°
(0.3 dB loss)
50
Output
Transmission Line
Including
Gate Bias T
(0.5 dB loss)
DUT
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit
represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been
de-embedded from actual measurements.
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相关代理商/技术参数 |
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| ATF34143 | 制造商:HP 制造商全称:Agilent(Hewlett-Packard) 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143 | 制造商:Avago Technologies 功能描述:MOSFET RF SOT-343 |
| ATF34143BLK | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
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| ATF-34143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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