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参数资料
| 型号： | ATF-331M4-TR2 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | MINIPAK-4 |
| 文件页数： | 12/16页 |
| 文件大小： | 212K |
| 代理商： | ATF-331M4-TR2 |
5
Notes:
1. Measurements made on fixed tuned
production test board that was tuned for
optimal gain match with reasonable noise
figure at 4V 60 mA bias. This circuit
represents a trade-off between an optimal
noise match, maximum gain match and a
realizable match based on production test
board requirements. Circuit losses have been
de-embedded from actual measurements.
2. Quiescent drain current, Idsq, is set with zero
RF drive applied. As P1dB is approached, the
drain current may increase or decrease
depending on frequency and dc bias point. At
lower values of Idsq the device is running
closer to class B as power output approaches
P1dB. This results in higher P1dB and higher
PAE (power added efficiency) when compared
to a device that is driven by a constant
current source as is typically done with active
biasing.
ATF-331M4 Typical Performance Curves, continued
Figure 12. Fmin vs. Frequency at 4 V, 60 mA.
FREQUENCY (GHz)
Fmin
(dB)
010
4
28
6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 14. Fmin & Ga vs. Frequency and Temp.
Vd = 4 V , Ids = 60 mA.
FREQUENCY (GHz)
GAIN
(dB)
NOISE
FIGURE
(dB)
08
4
26
85
°C
25
°C
-40
°C
25
20
15
10
5
2.0
1.5
1.0
0.5
0
Figure 15. P1dB, OIP3 vs. Frequency and
Temp at Vd = 4 V , Ids = 60 mA.
FREQUENCY (GHz)
P1dB,
OIP3
(dBm)
08
45
7
2
13
6
85
°C
25
°C
-40
°C
35
30
25
20
15
10
5
0
Figure 16. OIP3, P1dB, NF and Gain vs.
Bias[1,2] at 3.9 GHz.
Idsq (mA)
OIP3,
P1dB
(dBm),
GAIN
(dB)
NOISE
FIUGRE
(dB)
0
100
40
20
80
60
P1dB
OIP3
Gain
NF
35
30
25
20
15
10
5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
Figure 13. Associated Gain vs. Frequency
at 4 V , 60 mA.
FREQUENCY (GHz)
GAIN
(dB)
010
4
28
6
30
25
20
15
10
5
0
Figure 17. OIP3, P1dB, NF at 5.8 GHz.
Idsq (mA)
OIP3,
P1dB
(dBm),
GAIN
(dB)
NOISE
FIGURE
(dB)
0
100
40
20
80
60
P1dB
OIP3
Gain
NF
35
30
25
20
15
10
5
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
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