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参数资料
型号： ATF-331M4-TR2
厂商： AGILENT TECHNOLOGIES INC
元件分类： 小信号晶体管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： MINIPAK-4
文件页数： 13/16页
文件大小： 212K
代理商： ATF-331M4-TR2
6
ATF-331M4 Typical Scattering Parameters,
VDS = 2V, IDS = 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.82
-91.90
22.10
12.74
127.90
-27.13
0.044
53.30
0.40
-163.10
24.62
0.8
0.79
-119.10
18.85
8.76
112.80
-25.19
0.055
46.70
0.47
-169.67
22.02
1.0
0.78
-132.10
18.06
8.00
106.00
-24.44
0.060
44.70
0.49
-173.83
21.25
1.5
0.76
-151.40
14.75
5.46
93.73
-22.73
0.073
42.73
0.53
177.77
18.74
1.8
0.75
-159.60
13.55
4.76
88.20
-21.72
0.082
42.13
0.53
173.73
17.64
2.0
0.74
-163.60
13.36
4.65
85.00
-21.31
0.086
41.93
0.54
171.27
17.33
2.5
0.72
-170.70
10.33
3.29
77.97
-20.09
0.099
41.33
0.53
165.20
15.21
3.0
0.69
-174.30
9.60
3.02
71.83
-18.12
0.124
40.57
0.55
162.60
13.86
4.0
0.71
163.10
6.62
2.14
53.23
-17.20
0.138
30.30
0.56
138.03
10.77
5.0
0.73
150.00
4.98
1.77
41.60
-16.65
0.147
24.97
0.56
134.30
9.25
6.0
0.71
140.90
3.94
1.57
28.80
-16.08
0.157
17.23
0.57
115.73
7.71
7.0
0.73
123.90
2.92
1.40
14.70
-15.39
0.170
7.10
0.57
109.93
6.97
8.0
0.74
112.90
2.77
1.38
6.70
-15.04
0.177
2.57
0.58
108.90
6.98
9.0
0.76
97.70
2.60
1.35
-4.77
-14.99
0.178
-6.27
0.59
93.03
6.78
10.0
0.79
83.60
2.00
1.26
-18.20
-14.75
0.183
-17.47
0.59
78.30
6.54
11.0
0.86
61.90
0.08
1.01
-32.50
-14.80
0.182
-29.77
0.58
66.00
6.03
12.0
0.87
62.10
-0.71
0.92
-37.90
-14.33
0.192
-33.90
0.65
59.73
5.63
13.0
0.88
51.90
-1.54
0.84
-49.90
-14.89
0.180
-44.67
0.69
49.07
5.20
14.0
0.88
44.60
-2.09
0.79
-58.90
-15.44
0.169
-52.47
0.73
40.13
5.04
15.0
0.91
38.70
-4.00
0.63
-67.70
-15.81
0.162
-60.63
0.75
30.57
4.34
16.0
0.93
33.30
-5.66
0.52
-74.80
-18.71
0.116
-67.27
0.78
24.73
4.04
17.0
0.93
28.40
-5.68
0.52
-80.50
-17.86
0.128
-73.07
0.79
18.67
4.02
18.0
0.92
25.20
-6.58
0.47
-84.00
-17.99
0.126
-77.40
0.81
13.87
3.03
Freq
Fmin
Γ
opt
Γ
opt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.50
0.37
0.39
0.6
0.07
21.16
0.90
0.41
0.381
26.3
0.06
18.36
1.00
0.41
0.38
32.9
0.06
18.19
1.50
0.46
0.38
63.6
0.05
15.96
1.80
0.48
0.385
80
0.05
15.43
2.00
0.5
0.39
90.1
0.05
14.56
2.50
0.54
0.407
112.8
0.04
13.29
3.00
0.59
0.431
132
0.04
12.18
4.00
0.67
0.492
161.3
0.03
10.4
5.00
0.76
0.565
-179
0.02
8.94
6.00
0.85
0.638
-166
0.02
7.96
7.00
0.93
0.702
-156.9
0.04
7
8.00
1.02
0.747
-148.9
0.07
6.16
9.00
1.11
0.762
-139
0.11
5.8
10.00
1.19
0.737
-124.5
0.18
4.89
Notes:
1. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the end of
the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters,
VDS = 2V, IDS = 40 mA
Figure 18. MSG/MAG and |S21|
2 vs.
Frequency at 2 V , 40 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
020
10
515
40
30
20
10
0
-10
|S21|
2
相关PDF资料
PDF描述
ATF-331M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-331M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-331M4-BLKG X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
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