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参数资料
| 型号： | ATF-34143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 10/15页 |
| 文件大小： | 258K |
| 代理商： | ATF-34143-BLKG |
4
ATF-34143 Typical Performance Curves
Notes:
1. Measurements made on a fixed toned production test board that was tuned for optimal gain match with reasonable noise figure at 4V, 60 mA
bias. This circuit represents a trade-off between optimal noise match, maximum gain match, and a realizable match based on production test
board requirements. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quicescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of IDSQ the device is running closer to class
B as power output approaches P1dB. This results in higher PAE (power added efficiency) when compared to a device that is driven by a constant
current source as is typically done with active biasing. As an example, at a VDS = 4 V and IDSQ = 10 mA, Id increases to 62 mA as a P1dB of +19 dBm
is approached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4 V, 60 mA at 2 GHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
120
100
60
140
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
IDSQ (mA)
Figure 9. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4V, 60 mA at 900 MHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
100
60
120
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
CURRENT (mA)
Figure 8. Noise Figure vs. Current (Id)and Voltage
(VDS) at 2 GHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
1
0.8
0.6
0.4
0.2
0
3 V
4 V
CURRENT (mA)
Figure 11. Noise Figure vs. Current (Id)and Voltage
(VDS) at 900 MHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
3 V
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CURRENT (mA)
Figure 7. Associated Gain vs. Current (Id)and Voltage
(VD) at 2 GHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
20
15
10
5
0
CURRENT (mA)
Figure 10. Associated Gain vs. Current (Id)and Voltage
(VD) at 900 MHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
25
20
15
10
5
0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequencyand Current at 4V.
Fm
in
(d
B)
0
4.0
2.0
6.0
60 mA
40 mA
20 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequencyand Current
at 4V.
G a
(d
B)
0
2.0
1.0
4.0
5.0
3.0
6.0
25
20
15
10
5
60 mA
40 mA
20 mA
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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