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参数资料
| 型号： | ATF-34143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 4/15页 |
| 文件大小： | 258K |
| 代理商： | ATF-34143-BLKG |
12
L=Lc
L=Lb
R=Rb
L=Lb
R=Rb
L
C
C=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb
L=La*.5
L=Ld
L
LOSSYL
GATE_IN
SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La
L=Lb
R=Rb
L
LOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1–6.0 GHz
This model can be used as a design tool. It has been tested
on MDS for various specifications. However, for more
precise and accurate design, please refer to the measured
data in this data sheet. For future improvements Avago
reserves the right to change these models without prior
notice.
NFETMESFET
G
MODEL=FET
W=800
m
XX
D
XX
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-34143 Die Model
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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