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参数资料
型号： ATF-34143-BLKG
元件分类： 小信号晶体管
英文描述： X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件页数： 14/15页
文件大小： 258K
代理商： ATF-34143-BLKG
8
ATF-34143 Typical Noise Parameters
VDS = 3 V, IDS = 40 mA
Freq.
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
-
dB
0.5
0.10
0.87
13
0.16
23.0
0.9
0.13
0.82
28
0.13
19.6
1.0
0.14
0.80
32
0.13
19.2
1.5
0.17
0.73
50
0.1
17.7
1.8
0.21
0.70
61
0.09
17.1
2.0
0.23
0.66
68
0.08
16.7
2.5
0.29
0.60
87
0.06
15.8
3.0
0.35
0.54
106
0.05
14.9
4.0
0.47
0.46
144
0.03
13.4
5.0
0.6
0.41
-178
0.03
12.1
6.0
0.72
0.39
-142
0.06
10.9
7.0
0.85
0.41
-109
0.12
9.9
8.0
0.97
0.45
-80
0.21
9.1
9.0
1.09
0.52
-56
0.34
8.4
10.0
1.22
0.61
-39
0.50
8.0
ATF-34143 Typical Scattering Parameters, VDS = 3 V, IDS = 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.5
0.96
-40
21.32
11.645
151
-30.46
0.030
68
0.29
-43
25.89
0.8
0.89
-64
20.79
10.950
135
-27.33
0.043
56
0.24
-70
24.06
1.0
0.85
-81
19.96
9.956
124
-25.68
0.052
49
0.24
-88
22.82
1.5
0.79
-109
18.29
8.209
104
-23.61
0.066
36
0.23
-118
20.95
1.8
0.76
-121
17.50
7.495
96
-22.97
0.071
32
0.23
-130
20.24
2.0
0.74
-131
16.75
6.876
88
-22.38
0.076
27
0.22
-141
19.57
2.5
0.70
-150
15.39
5.880
74
-21.51
0.084
19
0.22
-160
18.45
3.0
0.67
-167
14.19
5.120
61
-20.92
0.090
12
0.22
-176
17.55
4.0
0.64
162
12.18
4.063
38
-19.83
0.102
-1
0.21
157
16.00
5.0
0.64
135
10.54
3.365
16
-19.02
0.112
-14
0.22
131
14.78
6.0
0.65
111
9.15
2.867
-5
-18.34
0.121
-28
0.24
105
12.91
7.0
0.66
87
7.80
2.454
-26
-17.86
0.128
-42
0.28
81
11.03
8.0
0.69
65
6.55
2.125
-46
-17.46
0.134
-55
0.32
60
9.93
9.0
0.73
46
5.33
1.848
-65
-17.20
0.138
-69
0.37
40
9.07
10.0
0.76
28
4.33
1.647
-84
-16.83
0.144
-84
0.41
23
8.59
11.0
0.78
9
3.30
1.462
-104
-16.65
0.147
-99
0.45
5
7.84
12.0
0.80
-11
2.15
1.281
-123
-16.65
0.147
-114
0.50
-14
7.15
13.0
0.83
-30
0.79
1.095
-142
-17.08
0.140
-130
0.55
-31
6.50
14.0
0.86
-44
-0.53
0.941
-158
-17.52
0.133
-142
0.60
-45
5.96
15.0
0.87
-56
-1.61
0.831
-174
-17.72
0.130
-154
0.64
-59
5.39
16.0
0.86
-72
-2.60
0.741
169
-17.72
0.130
-166
0.66
-73
4.21
17.0
0.86
-88
-3.72
0.652
153
-17.79
0.129
179
0.69
-88
3.43
18.0
0.88
-102
-5.15
0.553
137
-18.64
0.117
166
0.72
-105
2.95
FREQUENCY (GHz)
Figure 24. MSG/MAG and |S21|2 vs.
Frequency at 3 V, 40 mA.
MSG/MAG
and
S
21
(dB)
0
4
2
8
14 16
10 12
6
18
30
25
20
15
10
5
0
-5
-10
MSG
MAG
S21
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin
is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the
gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connect-
ing source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via
holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
相关PDF资料
PDF描述
ATF-34143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-TR2 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-34143-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-34143-BLKG 制造商:Avago Technologies 功能描述:RF Bipolar Transistor
ATF-34143-G 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143
ATF34143TR1 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R
ATF-34143-TR1 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-34143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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