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参数资料
| 型号： | ATF-34143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 3/15页 |
| 文件大小： | 258K |
| 代理商： | ATF-34143-BLKG |
11
Noise Parameter Applications Information
Fmin values at 2 GHz and higher are based on measure-
ments while the Fmins below 2 GHz have been extrapo-
lated. The Fmin values are based on a set of 16 noise figure
measurements made at 16 different impedances using an
ATN NP5 test system. From these measurements, a true
Fmin is calculated. Fmin represents the true minimum noise
figure of the device when the device is presented with an
impedance matching network that transforms the source
impedance, typically 50, to an impedance represented
by the reflection coefficient Γo. The designer must design
a matching network that will present Γo to the device with
minimal associated circuit losses. The noise figure of the
completed amplifier is equal to the noise figure of the
device plus the losses of the matching network preceding
the device. The noise figure of the device is equal to Fmin
only when the device is presented with Γo. If the reflection
coefficient of the matching network is other than Γo, then
the noise figure of the device will be greater than Fmin
based on the following equation.
NF = Fmin + 4 Rn
|Γs – Γo |2
Zo (|1 + Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized noise resistance, Γo is the
optimum reflection coefficient required to produce Fmin
and Γs is the reflection coefficient of the source imped-
ance actually presented to the device. The losses of the
matching networks are non-zero and they will also add
to the noise figure of the device creating a higher ampli-
fier noise figure. The losses of the matching networks
are related to the Q of the components and associated
printed circuit board loss. Γo is typically fairly low at higher
frequencies and increases as frequency is lowered. Larger
gate width devices will typically have a lower Γo as com-
pared to narrower gate width devices.
Typically for FETs, the higher Γo usually infers that an im-
pedance much higher than 50 is required for the device
to produce Fmin. At VHF frequencies and even lower L
Band frequencies, the required impedance can be in the
vicinity of several thousand ohms. Matching to such a
high impedance requires very hi-Q components in order
to minimize circuit losses. As an example at 900 MHz,
when airwwound coils (Q > 100) are used for matching
networks, the loss can still be up to 0.25 dB which will add
directly to the noise figure of the device. Using muiltilayer
molded inductors with Qs in the 30 to 50 range results
in additional loss over the airwound coil. Losses as high
as 0.5 dB or greater add to the typical 0.15 dB Fmin of the
device creating an amplifier noise figure of nearly 0.65 dB.
A discussion concerning calculated and measured circuit
losses and their effect on amplifier noise figure is covered
in Avago Application 1085.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-BLKG | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-34143-G | 制造商:Avago Technologies 功能描述:Transistor,RF,GaAs,17.5dB GA,ATF-34143 |
| ATF34143TR1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR1 | 功能描述:IC TRANS PHEMT 1.9GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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