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参数资料
| 型号： | ATF-34143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 10/15页 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR1 |
4
ATF-34143 Typical Performance Curves
Notes:
1. Measurementsmadeonafixedtonedproductiontestboardthatwastunedforoptimalgainmatchwithreasonablenoisefigureat4V,60mA
bias.Thiscircuitrepresentsatrade-offbetweenoptimalnoisematch,maximumgainmatch,andarealizablematchbasedonproductiontest
boardrequirements.Circuitlosseshavebeende-embeddedfromactualmeasurements.
2. P1dBmeasurementsareperformedwithpassivebiasing.Quicescentdraincurrent,IDSQ,issetwithzeroRFdriveapplied.AsP1dBisapproached,
thedraincurrentmayincreaseordecreasedependingonfrequencyanddcbiaspoint.AtlowervaluesofIDSQthedeviceisrunningclosertoclass
BaspoweroutputapproachesP1dB.ThisresultsinhigherPAE(poweraddedefficiency)whencomparedtoadevicethatisdrivenbyaconstant
currentsourceasistypicallydonewithactivebiasing.Asanexample,ataVDS=4VandIDSQ=10mA,Idincreasesto62mAasaP1dBof+19dBm
isapproached.
IDSQ (mA)
Figure 6. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4 V, 60 mA at 2 GHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
120
100
60
140
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
IDSQ (mA)
Figure 9. OIP3 and P1dB vs. IDSand VDS Tuned for NF @
4V, 60 mA at 900 MHz.[1,2]
OI
P3
,P
1d
B
(d
Bm
)
0
40
20
80
100
60
120
35
30
25
20
15
10
5
0
OIP3
3 V
4 V
P1dB
CURRENT (mA)
Figure 8. Noise Figure vs. Current (Id)and Voltage
(VDS) at 2 GHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
1
0.8
0.6
0.4
0.2
0
3 V
4 V
CURRENT (mA)
Figure 11. Noise Figure vs. Current (Id)and Voltage
(VDS) at 900 MHz.[1,2]
NO
IS
EF
IG
UR
E(
dB
)
0
40
20
80
100
60
120
3 V
4 V
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
CURRENT (mA)
Figure 7. Associated Gain vs. Current (Id)and Voltage
(VD) at 2 GHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
20
15
10
5
0
CURRENT (mA)
Figure 10. Associated Gain vs. Current (Id)and Voltage
(VD) at 900 MHz.[1,2]
AS
SO
CI
AT
ED
GA
IN
(d
B)
0
40
20
80
100
60
120
3 V
4 V
25
20
15
10
5
0
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequencyand Current at 4V.
Fm
in
(d
B)
0
4.0
2.0
6.0
60 mA
40 mA
20 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
FREQUENCY (GHz)
Figure 13. Associated Gain vs. Frequencyand Current
at 4V.
G a
(d
B)
0
2.0
1.0
4.0
5.0
3.0
6.0
25
20
15
10
5
60 mA
40 mA
20 mA
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF34143TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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