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参数资料
| 型号： | ATF-34143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 4/15页 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR1 |
12
L=Lc
L=Lb
R=Rb
L=Lb
R=Rb
L
C
C=Ca
C
C=Cb
LOSSYL
L=Lb
R=Rb
L=La*.5
L=Ld
L
LOSSYL
GATE_IN
SOURCE
DRAIN_OUT
R
EQUATION La=0.1 nH
EQUATION Lb=0.1 nH
EQUATION Lc=0.8 nH
EQUATION Ld=0.6 nH
EQUATION Rb=0.1 OH
EQUATION Ca=0.15 pF
EQUATION Cb=0.15 pF
R=0.1 OH
LOSSYL
L=La
L=Lb
R=Rb
L
LOSSYL
L=Lb
R=Rb
LOSSYL
G
S
D
SOURCE
ATF-34143 SC-70 4 Lead, High Frequency Nonlinear Model
Optimized for 0.1–6.0 GHz
Thismodelcanbeusedasadesigntool.Ithasbeentested
on MDS for various specifications. However, for more
preciseandaccuratedesign,pleaserefertothemeasured
datainthisdatasheet.ForfutureimprovementsAvago
reservestherighttochangethesemodelswithoutprior
notice.
NFETMESFET
G
MODEL=FET
W=800
m
XX
D
XX
S
XX
NFET=yes
PFET=
IDSMOD=3
VTO=–0.95
BETA= Beta
LAMBDA=0.09
ALPHA=4.0
B=0.8
TNOM=27
IDSTC=
VBI=.7
IDS model
DELTA=.2
GSCAP=3
CGS=cgs pF
GDCAP=3
GCD=Cgd pF
Gate model
RG=1
RD=Rd
RS=Rs
LG=Lg nH
LD=Ld nH
LS=Ls nH
CDS=Cds pF
CRF=.1
RC=Rc
Parasitics
GSFWD=1
GSREV=0
GDFWD=1
GDREV=0
VJR=1
IS=1 nA
IR=1 nA
IMAX=.1
XTI=
N=
EG=
Breakdown
FNC=01e+6
R=.17
P=.65
C=.2
Noise
Model scal factors (W=FET width in microns)
EQUATION Cds=0.01*W/200
EQUATION Beta=0.06*W/200
EQUATION Rd=200/W
EQUATION Rs=.5*200/W
EQUATION Cgs=0.2*W/200
EQUATION Cgd=0.04*W/200
EQUATION Lg=0.03*200/W
EQUATION Ld=0.03*200/W
EQUATION Ls=0.01*200/W
EQUATION Rc=500*200/W
* STATZ MESFET MODEL *
MODEL = FET
ATF-34143 Die Model
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-34143-TR2 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-34143-TR1 | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLKG | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-35143-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF34143TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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