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参数资料
| 型号： | ATF-34143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 8/15页 |
| 文件大小： | 273K |
| 代理商： | ATF-34143-TR1 |
2
ATF-34143 Absolute Maximum Ratings[1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain-SourceVoltage[2]
V
5.5
VGS
Gate-SourceVoltage[2]
V
-5
VGD
GateDrainVoltage[2]
V
-5
ID
DrainCurrent[2]
mA
Idss[3]
Pdiss
TotalPowerDissipation[4]
mW
725
Pinmax
RFInputPower
dBm
17
TCH
ChannelTemperature
°C
160
TSTG
StorageTemperature
°C
-65to160
θjc
ThermalResistance[5]
°C/W
165
Notes:
1. Operationofthisdeviceaboveanyoneof
these parameters may cause permanent
damage.
2. AssumesDCquiescentconditions.
3. VGS=0volts.
4. Source lead temperature is 25°C. Derate
6mW/°CforTL>40°C.
5. Thermalresistancemeasuredusing150°C
LiquidCrystalMeasurementmethod.
6. Under large signal conditions, VGS may
swingpositiveandthedraincurrentmay
exceedIdss.Theseconditionsareacceptable
as long as the maximum Pdiss and Pinmax
ratingsarenotexceeded.
Product Consistency Distribution Charts[7]
VDS (V)
Figure 1. Typical/Pulsed I-V Curves[6].
(VGS= -0.2V per step)
I DS
(mA)
0
2
4
6
8
250
200
150
100
50
0
+0.6 V
0 V
–0.6 V
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 4 V, 60 mA.
LSL=29.0, Nominal=31.8, USL=35.0
29
31
30
33
34
32
35
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 1.37245
Std = 0.66
9 Wafers
Sample Size = 450
NF (dB)
Figure 3. NF @ 2 GHz, 4 V, 60 mA.
LSL=0.1, Nominal=0.47, USL=0.8
0
0.4
0.2
0.6
0.8
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 2.69167
Std = 0.04
9 Wafers
Sample Size = 450
GAIN (dB)
Figure 4. Gain @ 2 GHz, 4 V, 60 mA.
LSL=16.0, Nominal=17.5, USL=19.0
16
17
16.5
18
18.5
17.5
19
120
100
80
60
40
20
0
-3 Std
+3 Std
Cpk = 2.99973
Std = 0.15
9 Wafers
Sample Size = 450
Notes:
7. Distributiondatasamplesizeis450samplestakenfrom9differentwafers.Futurewafersallocatedtothisproductmayhavenominalvalues
anywherewithintheupperandlowerspeclimits.
8. Measurementsmadeonproductiontestboard.Thiscircuitrepresentsatrade-offbetweenanoptimalnoisematchandarealizeablematchbased
onproductiontestrequirements.Circuitlosseshavebeende-embeddedfromactualmeasurements.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-34143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF34143TR2 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 5.5V V(BR)DSS | 90MA I(DSS) | SOT-343R |
| ATF-34143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-34143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF35076 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:2-18 GHz Low Noise Pseudomorphic HEMT |
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