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参数资料
| 型号： | ATF-38143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 13/13页 |
| 文件大小： | 452K |
| 代理商： | ATF-38143-BLKG |
9
Noise Parameter Applications Information
Fmin values at 2GHz and higher are based on
measurementswhiletheFminsbelow2GHzhavebeen
extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different
impedancesusinganATNNP5testsystem.Fromthese
measurements,atrueFminiscalculated.Fminrepresents
thetrueminimumnoisefigureofthedevicewhenthe
deviceispresentedwithanimpedancematchingnetwork
thattransformsthesourceimpedance,typically50Ω,to
animpedancerepresentedbythereflectioncoefficient
Γo.Thedesignermustdesignamatchingnetworkthat
will present Γo to the device with minimal associated
circuitlosses.Thenoisefigureofthecompletedamplifier
isequaltothenoisefigureofthedeviceplusthelosses
of the matching network preceding the device. The
noisefigureofthedeviceisequaltoFminonlywhenthe
deviceispresentedwithΓo.Ifthereflectioncoefficient
ofthematchingnetworkisotherthanΓo,thenthenoise
figureofthedevicewillbegreaterthanFminbasedonthe
followingequation.
NF=Fmin+4Rn|Γs–Γo|2
Zo(|1+Γo|2)(1–Γs|2)
Where Rn/Zo is the normalized noise resistance, Γo is
theoptimumreflectioncoefficientrequiredtoproduce
Fmin and Γs is the reflection coefficient of the source
impedanceactuallypresentedtothedevice.Thelosses
of the matching networks are non-zero and they will
also add to the noise figure of the device creating a
higheramplifiernoisefigure.Thelossesofthematching
networks are related to the Q of the components and
associatedprintedcircuitboardloss.Γoistypicallyfairly
lowathigherfrequenciesandincreasesasfrequencyis
lowered.Largergatewidthdeviceswilltypicallyhavea
lowerΓoascomparedtonarrowergatewidthdevices.
Typically for FETs, the higher Γo usually infers that an
impedance much higher than 50Ω is required for the
device to produce Fmin. At VHF frequencies and even
lowerLBandfrequencies,therequiredimpedancecanbe
inthevicinityofseveralthousandohms.Matchingtosuch
ahighimpedancerequiresveryhi-Qcomponentsinorder
to minimize circuit losses. As an example at 900 MHz,
when air-wound coils (Q>100) are used for matching
networks,thelosscanstillbeupto0.25dBwhichwilladd
directlytothenoisefigureofthedevice.Usingmuilti-layer
molded inductors with Qs in the 30 to 50 range results
inadditionallossovertheair-woundcoil.Lossesashigh
as0.5dBorgreateraddtothetypical0.15dBFminofthe
devicecreatinganamplifiernoisefigureofnearly0.65dB.
Adiscussionconcerningcalculatedandmeasuredcircuit
lossesandtheireffectonamplifiernoisefigureiscovered
inAvagoApplication1085.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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