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参数资料
| 型号： | ATF-38143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 8/13页 |
| 文件大小： | 452K |
| 代理商： | ATF-38143-BLKG |
4
ATF-38143 Typical Performance Curves
Notes:
1. Measurementsmadeonafixedtunedproductiontestboardthatwastunedforoptimalgainmatchwithreasonablenoisefigureat2V10mA
bias.Thiscircuitrepresentsatrade-offbetweenanoptimalnoisematch,maximumgainmatchandarealizablematchbasedonproductiontest
boardrequirements.Circuitlosseshavebeende-embeddedfromactualmeasurements.
2. P1dBmeasurementsareperformedwithpassivebiasing.Quiescentdraincurrent,IDSQ,issetwithzeroRFdriveapplied.AsP1dBisapproached,the
draincurrentmayincreaseordecreasedependingonfrequencyanddcbiaspoint.AtlowervaluesofIDSQthedeviceisrunningclosertoclassB
aspoweroutputapproachesP1dB.ThisresultsinhigherP1dBandhigherPAE(poweraddedefficiency)whencomparedtoadevicethatisdriven
byaconstantcurrentsourceasistypicallydonewithactivebiasing.
CURRENT, IDS (mA)
Figure 6. OIP3 and P1dB vs. Id at 2V, 2 GHz.
OIP3,
P
1d
B
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
OIP3
P1dB
CURRENT, IDS (mA)
Figure 7. OIP3 and P1dB vs. Id at 2V, 900 MHz.
OIP3,
P
1d
B
(dBm)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
CURRENT, IDS (mA)
Figure 8. Noise Figure vs. Id at 2V, 2 GHz.
NOISE
FIGURE
(dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, IDS (mA)
Figure 9. Noise Figure vs. Id at 2V, 900 MHz.
NOISE
FIGURE
(dB)
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
60
20
10
40
50
30
0
CURRENT, IDS (mA)
Figure 10. Associated Gain vs. Id at 2V, 2 GHz.
ASSOCIATED
GAIN
(dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
OIP3
P1dB
CURRENT, IDS (mA)
Figure 11. Associated Gain vs. Id at 2V, 900 MHz.
ASSOCIATED
GAIN
(dB)
0
22
21
20
19
18
17
16
60
20
10
40
50
30
15
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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