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| 型号： | ATF-38143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 9/13页 |
| 文件大小： | 452K |
| 代理商： | ATF-38143-BLKG |
5
ATF-38143 Typical Performance Curves, continued
Notes:
1. P1dBmeasurementsareperformedwithpassivebiasing.Quiescentdraincurrent,IDSQ,issetwithzeroRFdriveapplied.AsP1dBisapproached,the
draincurrentmayincreaseordecreasedependingonfrequencyanddcbiaspoint.AtlowervaluesofIDSQthedeviceisrunningclosertoclassB
aspoweroutputapproachesP1dB.ThisresultsinhigherP1dBandhigherPAE(poweraddedefficiency)whencomparedtoadevicethatisdriven
byaconstantcurrentsourceasistypicallydonewithactivebiasing.
FREQUENCY (GHz)
Figure 12. Fmin vs. Frequency and Current at 2V.
F
mi
n(dB
)
0
8
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
4
2
6
FREQUENCY (GHz)
Figure 13. Fmin and Gavs. Frequency and
Temperature at 2V, 10 mA.
G
a(dB
)
0
30
25
20
15
10
5
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
7
2
1
4
5
6
3
–40 C
+25 C
+85 C
Ga
Fmin
FREQUENCY (GHz)
Figure 14. Associated Gain vs. Frequency and
Current at 2V.
G
a(dB
)
0
12
30
25
20
15
10
5
0
4
2
8
10
6
5 mA
10 mA
20 mA
FREQUENCY (MHz)
Figure 15. P1dB and OIP3 vs. Frequency and
Temperature at 2V, 10 mA.
P
1dB,
OIP
3
(dBm
)
0
8000
26
24
22
20
18
16
14
12
4000
2000
6000
10
–40 C
+25 C
+85 C
CURRENT, IDS (mA)
Figure 16. NF, Gain, P1dB and OIP3 vs. IDS at 2V, 3.9 GHz.
GAIN
(dB),
P
1d
B
and
OIP3
(dBm
)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
NF
(dB)
P1dB
OIP3
Gain
NF
CURRENT, IDS (mA)
Figure 17. NF, Gain, P1dB and OIP3 vs. IDS at 2V, 5.8 GHz.
GAIN
(dB),
P
1d
B
and
OIP3
(dBm
)
0
60
30
25
20
15
10
5
0
20
10
40
50
30
NF
(dB)
P1dB
OIP3
Gain
NF
5 mA
10 mA
20 mA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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