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参数资料
| 型号： | ATF-38143-BLKG |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 2/13页 |
| 文件大小： | 452K |
| 代理商： | ATF-38143-BLKG |
10
ATF-38143 Die Model
ATF-38143 SC70 4 Lead, High Frequency Nonlinear Model
NFET=yes
PFET=no
Vto=–0.75
Beta=0.3
Lambda=0.07
Alpha=4
B=0.8
Tnom=27
Idstc=
Vbi=0.7
Tau=
Betatce=
Delta1=
Delta2=
Gscap=3
Cgs=0.997 pF
Gdcap=3
Cgd=0.176 pF
Rgd=0.195
Tqm=
Vmax=
Fc=
Rd=0.084
Rg=0.264
Rs=0.054
Ld=0.0014 nH
Lg-0.0883 nH
Ls=0.001 nH
Cds=0.0911 pF
Crf=0.0936
Rc=137
Gsfwd=1
Gsrev=0
Gdfwd=1
Gdrev=0
Vjr=1
Is=1 nA
Ir=1 nA
Imax=0.1
Xti=
N=
Eg=
Vbr=
Vtotc=
Rin=
Taumd1=no
Fnc=1E6
R=0.17
C=0.2
P=1
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
All Params=
Statz Model
MESFETM1
GATE
SOURCE
INSIDE Package
Port
G
Num=1
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.2 nH
R=0.001
C
C2
C=0.11 pF
L
L7
C=0.6 nH
R=0.001
MSub
TLINP
TL4
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
A=0.000
F=1 GHz
TanD=0.001
VIA2
V1
D=20 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40 mil
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
TLINP
TL3
Z=Z2 Ohm
L=25 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
TLINP
TL9
Z=Z2 Ohm
L=10.0 mil
K=K
A=0.000
F=1 GHz
TanD=0.001
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Ean
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL8
Z=Z1 Ohm
L=15 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL7
Z=Z2/2 Ohm
L=5.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL5
Z=Z2 Ohm
L=26.0 mil
K=K
A=0.0000
F=1 GHz
TanD=0.001
TLINP
TL6
Z=Z1 Ohm
L=15 mil
K=1
A=0.0000
F=1 GHz
TanD=0.001
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
L
L1
L=0.6 nH
R=0.001
L
L4
L=0.2 nH
R=0.001
GaAsFET
FET1
Model= MESFETN1
Mode= nonlinear
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+0.34 mil
T=0.15 mil
TanD=0
Rough=0 mil
Theviasarenotpartofthemodelassuch.Theyareonlyincludedtoaccountforthesourceviasinthetestfixture.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-38143-TR1G | X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-50189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-38143-BLKG | 制造商:Avago Technologies 功能描述:RF BIPOLAR TRANSISTOR |
| ATF-38143-TR1 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-38143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-38143-TR2 | 制造商:Avago Technologies 功能描述:TRANSISTOR,HEMT,N-CHAN,4.5V V(BR)DSS,90mA I(DSS),SOT-343R |
| ATF-38143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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