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参数资料
| 型号： | ATF-511P8-BLK |
| 元件分类： | 功率晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF POWER, HEMFET |
| 封装： | 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8 |
| 文件页数： | 11/16页 |
| 文件大小： | 447K |
| 代理商： | ATF-511P8-BLK |
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
200 mA quiesent bias:
Figure 7. Simplified schematic of production test board. Primary purpose is to show 15 Ohm series resistor placement in
gate supply. Transmission line tapers, tee intersections, bias lines and parasitic values are not shown.
RF Input
1.2 pF
2.7 nH
1.8 nH
RF Output
50 Ohm
.02
λ
110 Ohm
.03
λ
110 Ohm
.03
λ
50 Ohm
.02
λ
DUT
15 nH
15 Ohm
2.2
F
Gate
DC Supply
47 nH
2.2
F
Drain
DC Supply
Optimum OIP3
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang
Mag
Ang
(dBm)
(dB)
(dBm)
(%)
0.9
0.776
152
0.549
-178
43.3
17.94
29.63
63.8
2.0
0.872
-171
0.683
-179
43.1
15.06
30.12
66.8
2.4
0.893
-162
0.715
-174
42.8
14.03
29.90
64.5
3.9
0.765
-132
0.574
-144
41.7
9.47
29.02
52
Optimum P1dB
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang
Mag
Ang
(dBm)
(dB)
(dBm)
(%)
0.9
0.773
153
0.784
-173
38.0
19.28
31.9
54.23
2.0
0.691
147
0.841
-166
36.4
10.34
31.4
38.15
2.4
0.797
164
0.827
-166
36.2
8.43
31.2
37.38
3.9
0.602
-163
0.794
-155
35.4
7.03
31
32.72
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-52189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-52189-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-521P8-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
| ATF-521P8-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-511P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
| ATF-511P8-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-511P8-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-52189-TR1 | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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