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参数资料
| 型号： | ATF-54143-BLK |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 11/17页 |
| 文件大小： | 212K |
| 代理商： | ATF-54143-BLK |
3
ATF-54143 Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 60 mA
V
0.4
0.59
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.38
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A—
1
5
Gm
Transconductance
Vds = 3V, gm =
Idss/Vgs;
mmho
230
410
560
Vgs = 0.75 - 0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = -3V
A
—
200
NF
Noise Figure [1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
—
0.5
0.9
f = 900 MHz
Vds = 3V, Ids = 60 mA
dB
—
0.3
—
Ga
Associated Gain [1]
f = 2 GHz
Vds = 3V, Ids = 60 mA
dB
15
16.6
18.5
f = 900 MHz
Vds = 3V, Ids = 60 mA
dB
—
23.4
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
33
36.2
—
Intercept Point [1]
f = 900 MHz
Vds = 3V, Ids = 60 mA
dBm
—
35.5
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 60 mA
dBm
—
20.4
—
Output Power [1]
f = 900 MHz
Vds = 3V, Ids = 60 mA
dBm
—
18.4
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values measured from a sample size of 450 parts from 9 wafers.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.30
Γ_ang = 150°
(0.3 dB loss)
Output
Matching Circuit
Γ_mag = 0.035
Γ_ang = -71°
(0.4 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit repre-
sents a trade-off between an optimal noise match and associated impedance matching circuit losses. Circuit losses have been de-embedded from
actual measurements.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-541M4-TR1G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-54143-BLKG | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR1 | 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| ATF-54143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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