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参数资料
型号： ATF-54143-BLK
厂商： AGILENT TECHNOLOGIES INC
元件分类： 小信号晶体管
英文描述： C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： PLASTIC, SC-70, 4 PIN
文件页数： 15/17页
文件大小： 212K
代理商： ATF-54143-BLK
7
ATF-54143 Typical Scattering Parameters,
VDS = 3V, IDS = 60 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.99
-18.9
28.84
27.66
167.6
0.01
80.0
0.54
-14.0
34.42
0.5
0.81
-80.8
26.04
20.05
128.0
0.03
52.4
0.40
-58.8
28.25
0.9
0.71
-117.9
22.93
14.01
106.2
0.04
41.8
0.29
-83.8
25.44
1.0
0.69
-124.4
22.24
12.94
102.2
0.05
40.4
0.27
-88.5
24.13
1.5
0.64
-149.8
19.40
9.34
86.1
0.05
36.1
0.21
-105.2
22.71
1.9
0.62
-164.9
17.66
7.64
75.6
0.06
33.8
0.17
-114.7
21.05
2.0
0.62
-168.3
17.28
7.31
73.3
0.06
33.3
0.17
-117.0
20.86
2.5
0.60
176.2
15.58
6.01
61.8
0.07
30.1
0.13
-129.7
19.34
3.0
0.60
162.3
14.15
5.10
51.0
0.08
26.5
0.11
-146.5
18. 04
4.0
0.62
137.1
11.81
3.90
30.8
0.09
17.1
0.10
165.2
1 4.87
5.0
0.66
115.5
9.87
3.11
11.7
0.11
6.8
0.14
131.5
13.27
6.0
0.69
97.2
8.22
2.58
-6.4
0.12
-3.9
0.18
112.4
11.72
7.0
0.70
80.2
6.85
2.20
-24.0
0.13
-15.8
0.20
94.3
10.22
8.0
0.72
62.2
5.58
1.90
-41.8
0.14
-28.0
0.23
70.1
9.02
9.0
0.76
45.0
4.40
1.66
-59.9
0.15
-39.6
0.29
50.6
8.38
10.0
0.83
28.4
3.06
1.42
-78.7
0.15
-55.1
0.38
36.8
8.71
11.0
0.85
13.9
1.60
1.20
-95.8
0.15
-68.6
0.46
24.4
7.55
12.0
0.88
-0.2
0.43
1.05
-111.1
0.15
-80.9
0.51
11.3
7.55
13.0
0.89
-14.6
-0.65
0.93
-128.0
0.15
-94.9
0.55
-5.2
6.70
14.0
0.88
-30.6
-1.98
0.80
-146.1
0.14
-109.3
0.61
-20.8
5.01
15.0
0.88
-45.0
-3.62
0.66
-162.7
0.13
-122.9
0.66
-35.0
3.73
16.0
0.88
-54.5
-5.37
0.54
-176.6
0.12
-133.7
0.70
-45.8
2.54
17.0
0.88
-62.5
-6.83
0.46
171.9
0.12
-143.2
0.73
-56.1
1.57
18.0
0.92
-73.4
-8.01
0.40
157.9
0.11
-156.3
0.76
-68.4
2.22
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.15
0.34
42.3
0.04
28.50
0.9
0.20
0.32
62.8
0.04
24.18
1.0
0.22
0.32
67.6
0.04
23.47
1.9
0.42
0.27
116.3
0.04
18.67
2.0
0.45
0.27
120.1
0.04
18.29
2.4
0.52
0.26
145.8
0.04
16.65
3.0
0.59
0.29
178.0
0.05
15.56
3.9
0.70
0.36
-145.4
0.05
13.53
5.0
0.93
0.47
-116.0
0.10
12.13
5.8
1.16
0.52
-98.9
0.18
11.10
6.0
1.19
0.55
-96.5
0.20
10.95
7.0
1.26
0.60
-77.1
0.37
9.73
8.0
1.63
0.62
-56.1
0.62
8.56
9.0
1.69
0.70
-38.5
0.95
7.97
10.0
1.73
0.79
-21.5
1.45
7.76
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a set of
16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of the gate
lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes connecting source
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter via holes are placed
within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters,
VDS = 3V, IDS = 60 mA
Figure 20. MSG/MAG and |S21|
2 vs.
Frequency at 3V, 60 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
020
10
515
40
35
30
25
20
15
10
5
0
-5
10
-15
MSG
相关PDF资料
PDF描述
ATF-54143-BLKG C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-541M4-TR1G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-54143-BLKG 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-54143-TR1 功能描述:IC TRANS E-PHEMT 2GHZ SOT-343 RoHS:否 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR
ATF-54143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-54143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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