参数资料
型号: ATP204-TL-H
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 30V 100A ATPAK
产品目录绘图: ATPAK Package P-Channel & N-Channel Top
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 100A
开态Rds(最大)@ Id, Vgs @ 25° C: 5.6 毫欧 @ 50A,10V
闸电荷(Qg) @ Vgs: 70nC @ 10V
输入电容 (Ciss) @ Vds: 4600pF @ 10V
功率 - 最大: 60W
安装类型: 表面贴装
封装/外壳: ATPAK(2 引线 + 接片)
供应商设备封装: ATPAK
包装: 标准包装
产品目录页面: 1536 (CN2011-ZH PDF)
其它名称: 869-1080-6
Ordering number : ENA1551A
ATP204
N-Channel Power MOSFET
30V, 100A, 5.6m Ω , Single ATPAK
Features
http://onsemi.com
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?
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Low ON-resistance
4.5V drive
Halogen free compliance
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?
?
Large current
Slim package
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±20
100
Unit
V
V
A
Drain Current (PW ≤ 10 μ s)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
IDP
PD
Tch
Tstg
EAS
IAV
PW ≤ 10 μ s, duty cycle ≤ 1%
Tc=25 ° C
300
60
150
--55 to +150
235
50
A
W
° C
° C
mJ
A
Note : * 1 VDD=15V, L=100 μ H, IAV=50A
* 2 L ≤ 100 μ H, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7057-001
ATP204-TL-H
Product & Package Information
? Package : ATPAK
? JEITA, JEDEC : -
? Minimum Packing Quantity : 3,000 pcs./reel
6.5
1.5
4.6
Packing Type: TL
Marking
2.6
4
0.4
0.4
ATP204
LOT No.
TL
Electrical Connection
2,4
1
2
3
0.55
0.8
0.6
0.4
1 : Gate
2.3
2.3
2 : Drain
3 : Source
1
4 : Drain
Semiconductor Components Industries, LLC, 2013
July, 2013
ATPAK
3
61312 TKIM/91609PA TKIM TC-00002081 No. A1551-1/7
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