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参数资料
| 型号： | AUIRF7737L2TR1 |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 40 V, 0.0019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7 |
| 文件页数： | 7/11页 |
| 文件大小： | 292K |
| 代理商： | AUIRF7737L2TR1 |
www.irf.com
5
AUIRF7737L2TR/TR1
Fig 7. Typical Threshold Voltage vs. Junction Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
Fig 9. Typical Forward Transconductance Vs. Drain Current
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12. Maximum Drain Current vs. Case Temperature
-75 -50 -25 0
25 50 75 100 125 150 175
TJ , Temperature ( °C )
1.5
2.5
3.5
4.5
5.5
V
G
S
(t
h)
,G
at
e
th
re
sh
ol
d
V
ol
ta
ge
(V
)
ID = 1.0A
ID = 1.0mA
ID = 250A
ID = 150A
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,C
ap
ac
ita
nc
e
(p
F
)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0
20
40
60
80
100 120 140 160
ID,Drain-to-Source Current (A)
0
50
100
150
200
250
300
G
fs
,F
or
w
ar
d
T
ra
ns
co
nd
uc
ta
nc
e
(S
)
TJ = 25°C
TJ = 175°C
VDS = 10V
380s PULSE WIDTH
0
25
50
75
100
125
QG, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
V
G
S
,G
at
e-
to
-S
ou
rc
e
V
ol
ta
ge
(V
)
VDS= 32V
VDS= 20V
VDS= 8V
ID= 94A
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
I D
,
D
ra
in
C
ur
re
nt
(A
)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
1.0
10
100
1000
I S
D
,R
ev
er
se
D
ra
in
C
ur
re
nt
(A
)
TJ = -40°C
TJ = 25°C
TJ = 175°C
VGS = 0V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRF7738L2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7738L2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7739L2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRF7739L2TR_10 | 制造商:IRF 制造商全称:International Rectifier 功能描述:Automotive DirectFET Power MOSFET |
| AUIRF7739L2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 1mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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