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参数资料
| 型号： | AUIRF7738L2TR |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 40 V, 0.0016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-7 |
| 文件页数： | 4/11页 |
| 文件大小： | 294K |
| 代理商： | AUIRF7738L2TR |
2
www.irf.com
AUIRF7738L2TR/TR1
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 9
D
S
G
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
V(BR)DSS/TJ
Breakdown Voltage Temp. Coefficient
–––
0.02
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
1.2
1.6
m
VGS(th)
Gate Threshold Voltage
2.0
3.0
4.0
V
VGS(th)/TJ
Gate Threshold Voltage Coefficient
–––
-8.4
–––
mV/°C
gfs
Forward Transconductance
113
–––
S
RG
Gate Resistance
–––
1.0
–––
IDSS
Drain-to-Source Leakage Current
–––
5
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Qg
Total Gate Charge
–––
129
194
Qgs1
Pre-Vth Gate-to-Source Charge
–––
27
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
10
–––
See Fig.11
Qgd
Gate-to-Drain ("Miller") Charge
–––
45
–––
Qgodr
Gate Charge Overdrive
–––
47
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
55
–––
Qoss
Output Charge
–––
54
–––
nC
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
77
–––
td(off)
Turn-Off Delay Time
–––
39
–––
tf
Fall Time
–––
38
–––
Ciss
Input Capacitance
–––
7471
–––
Coss
Output Capacitance
–––
1640
–––
Crss
Reverse Transfer Capacitance
–––
737
–––
Coss
Output Capacitance
–––
5936
–––
Coss
Output Capacitance
–––
1465
–––
Coss eff.
Effective Output Capacitance
–––
2261
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
50
75
ns
Qrr
Reverse Recovery Charge
–––
68
102
nC
IF = 109A, VDD = 20V
di/dt = 100A/s
i
IS = 109A, VGS = 0V i
ID = 109A
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 10Vi
ID = 109A
RG = 1.8
= 1.0MHz
VGS = 0V, VDS = 0V to 32V
Conditions
nA
Conditions
VGS = 0V, ID = 250A
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 109A i
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = -20V
p-n junction diode.
MOSFET symbol
Conditions
VGS = 0V
VDS = 25V
showing the
integral reverse
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
–––
184
736
pF
VDS = VGS, ID = 250A
–––
A
nC
ns
VDS = 10V, ID = 109A
VDS = 20V, VGS = 10V
VGS = 20V
VDS = 40V, VGS = 0V
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