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参数资料
型号： AUIRFS3206TRR
元件分类： JFETs
英文描述： 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封装： ROHS COMPLIANT, PLASTIC, D2PAK-3
文件页数： 10/13页
文件大小： 286K
代理商： AUIRFS3206TRR
AUIRFS/SL3206
6
www.irf.com
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7.
ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC
Iav = 2
DT/ [1.3BVZth]
EAS (AR) = PD (ave)tav
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
he
rm
al
R
es
po
ns
e
(
Z
th
JC
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
40
80
120
160
200
E
A
R
,A
va
la
nc
he
E
ne
rg
y
(m
J)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 120A
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
va
la
nc
he
C
ur
re
nt
(A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔΤ j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
ΔTj = 150°C and
Tstart =25°C (Single Pulse)
Ri (°C/W)
τι (sec)
0.106416
0.0001
0.201878 0.001262
0.190923 0.011922
τ
J
τJ
τ1
τ1
τ2
τ2
τ
3
τ3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τC
Ci=
τi/Ri
Ci=
τi/Ri
相关PDF资料
PDF描述
AUIRFSL3206 120 A, 60 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRFS3207ZTRL 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFS3207Z 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
AUIRFSL3207Z 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
AUIRFS3207ZTRR 120 A, 75 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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