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参数资料
| 型号： | AUIRFSL3607 |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/12页 |
| 文件大小： | 280K |
| 代理商： | AUIRFSL3607 |
08/16/11
www.irf.com
1
AUIRFS3607
AUIRFSL3607
HEXFET Power MOSFET
S
D
G
VDSS
75V
RDS(on) typ.
7.34m
:
max.
9.0m:
ID
80A
GD
S
Gate
Drain
Source
D2Pak
AUIRFS3607
TO-262
AUIRFSL3607
S
D
G
D
S
G
Specifically designed for Automotive applications, this
HEXFET Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in
Automotiveapplicationsandawidevarietyofotherapplications.
Description
Features
l
Advanced Process Technology
l
Low On-Resistance
l
175°C Operating Temperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Lead-Free, RoHS Compliant
l
Automotive Qualified *
AUTOMOTIVE GRADE
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.
Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA)
is 25°C, unless otherwise specified.
HEXFET is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
PD - 96402
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
e
V/ns
EAS (Thermally limited)
Single Pulse Avalanche Energy d
mJ
IAR
Avalanche Current
A
EAR
Repetitive Avalanche Energy f
mJ
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
j
–––
1.045
RθJA
Junction-to-Ambient (PCB Mount) , D2Pak i
–––
40
Max.
80
56
310
0.96
300(1.6mm from case)
°C
A
°C/W
120
46
14
140
27
-55 to + 175
± 20
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3607 | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806TRL | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806 | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806TRR | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4010-7P | 190 A, 100 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRFSL4010 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET N CH 100V 180A TO262 制造商:International Rectifier 功能描述:Automotive MOSFET 10 hm, 143 nC Qg, D2Pak |
| AUIRFSL4010-306 | 制造商:International Rectifier 功能描述:AUTOMOTIVE MOSFET 100V, 170A, 4.7 MOHM, 143 NC QG, D2PAK - Rail/Tube |
| AUIRFSL4115 | 功能描述:MOSFET N CH 150V 99A TO262 制造商:infineon technologies 系列:HEXFET? 包装:管件 零件状态:有效 FET 类型:MOSFET N 通道，金属氧化物 FET 功能:标准 漏源极电压（Vdss）:150V 电流 - 连续漏极（Id）（25°C 时）:99A（Tc） 不同?Id，Vgs 时的?Rds On（最大值）:12.1 毫欧 @ 62A，10V 不同 Id 时的 Vgs（th）（最大值）:5V @ 250μA 不同 Vgs 时的栅极电荷（Qg）:120nC @ 10V 不同 Vds 时的输入电容（Ciss）:5270pF @ 50V 功率 - 最大值:375W 工作温度:-55°C ~ 175°C（TJ） 安装类型:通孔 封装/外壳:TO-262-3，长引线，I2Pak，TO-262AA 供应商器件封装:TO-262 标准包装:50 |
| AUIRFSL4310 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRFSL4310-306 | 功能描述:MOSFET AUTO 100V 1 N-CH HEXFET 7mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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