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参数资料
| 型号： | AUIRFSL3607 |
| 元件分类： | JFETs |
| 英文描述： | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 封装： | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN |
| 文件页数： | 5/12页 |
| 文件大小： | 280K |
| 代理商： | AUIRFSL3607 |
AUIRFS/SL3607
2
www.irf.com
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application
note #AN-994.
Rθ is measured at TJ approximately 90°C.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH,RG = 25Ω,
IAS = 46A, VGS =10V. Part not recommended for use
above this value.
ISD ≤ 46A, di/dt ≤ 1920A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
V
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
––– 0.096 –––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
7.34
9.0
mΩ
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
gfs
Forward Transconductance
115
–––
S
IDSS
Drain-to-Source Leakage Current
–––
20
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Qg
Total Gate Charge
–––
56
84
Qgs
Gate-to-Source Charge
–––
13
–––
Qgd
Gate-to-Drain ("Miller") Charge
–––
16
–––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
–––
40
–––
RG(int)
Internal Gate Resistance
–––
0.55
–––
Ω
td(on)
Turn-On Delay Time
–––
16
–––
tr
Rise Time
–––
110
–––
td(off)
Turn-Off Delay Time
–––
43
–––
tf
Fall Time
–––
96
–––
Ciss
Input Capacitance
–––
3070
–––
Coss
Output Capacitance
–––
280
–––
Crss
Reverse Transfer Capacitance
–––
130
–––
Coss eff. (ER) Effective Output Capacitance (Energy Related)
–––
380
–––
Coss eff. (TR) Effective Output Capacitance (Time Related)
–––
610
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
d
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
33
50
TJ = 25°C
VR = 64V,
–––
39
59
TJ = 125°C
IF = 46A
Qrr
Reverse Recovery Charge
–––
32
48
TJ = 25°C
di/dt = 100A/μs
f
–––
47
71
TJ = 125°C
IRRM
Reverse Recovery Current
–––
1.9
–––
A
TJ = 25°C
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ns
nC
pF
–––
80
310
A
μA
nA
nC
ns
ID = 46A
RG = 6.8Ω
VGS = 10V f
VDD = 49V
ID = 46A, VDS =0V, VGS = 10V
TJ = 25°C, IS = 46A, VGS = 0V f
integral reverse
p-n junction diode.
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mAd
VGS = 10V, ID = 46A f
VDS = VGS, ID = 100μA
VDS = 75V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
MOSFET symbol
showing the
VDS = 38V
Conditions
VGS = 10V f
VGS = 0V
VDS = 50V
= 1.0MHz
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Conditions
VDS = 50V, ID = 46A
ID = 46A
VGS = 20V
VGS = -20V
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRFS3607 | 80 A, 75 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806TRL | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806 | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS3806TRR | 43 A, 60 V, 0.0158 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| AUIRFS4010-7P | 190 A, 100 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
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