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参数资料
| 型号： | AUIRL7732S2TR |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 40 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 1/11页 |
| 文件大小： | 216K |
| 代理商： | AUIRL7732S2TR |
www.irf.com
1
04/07/11
HEXFET is a registered trademark of International Rectifier.
AUIRL7732S2TR
AUIRL7732S2TR1
Applicable DirectFET Outline and Substrate Outline
DirectFET Power MOSFET
AUTOMOTIVE GRADE
Logic Level
Advanced Process Technology
Optimized for Automotive DC-DC, Motor Drive and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS and Halogen free
PD - 97635A
SB
SC
M2
M4
L4
L6
L8
DirectFET
ISOMETRIC
SC
DD
G
S
Description
The AUIRL7732S2 combines the latest Automotive HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve
low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET
Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET packaging
platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement
specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized
together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques
to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive
applications.
V(BR)DSS
40V
RDS(on) typ.
5.0m
Ω
max.
6.6m
Ω
ID (Silicon Limited)
58A
Qg
22nC
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Units
VDS
Drain-to-Source Voltage
VGS
Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)f
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)e
IDM
Pulsed Drain Current
i
PD @TC = 25°C
Power Dissipation
f
PD @TA = 25°C
Power Dissipation
e
EAS
Single Pulse Avalanche Energy (Thermally Limited)
h
EAS (tested)
Single Pulse Avalanche Energy Tested Value
h
IAR
Avalanche Current
g
A
EAR
Repetitive Avalanche Energy
g
mJ
TP
Peak Soldering Temperature
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
e
–––
67
RθJA
Junction-to-Ambient
j
12.5
–––
RθJA
Junction-to-Ambient
k
20
–––
°C/W
RθJCan
Junction-to-Can
fl
–––
3.7
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
f
W/°C
124
46
mJ
Max.
58
41
230
0.27
14
41
W
2.2
See Fig. 18a,18b,16,17
260
°C
-55 to + 175
V
A
± 16
40
相关PDF资料 |
PDF描述 |
|---|---|
| AUIRL7736M2TR | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRL7736M2TR1 | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLR024NTRL | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLU024N | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRLR024N | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRL7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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