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参数资料
| 型号： | AUIRL7732S2TR |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 40 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 2/11页 |
| 文件大小： | 216K |
| 代理商： | AUIRL7732S2TR |
AUIRL7732S2TR/TR1
10
www.irf.com
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Notes:
Starting TJ = 25°C, L = 0.075mH, RG = 50Ω, IAS = 35A,Vgs = 16V.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Used double sided cooling, mounting pad with large heatsink.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Automotive DirectFET Tape & Reel Dimension (Showing component orientation).
REEL DIMENSIONS
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as AUIRL7732S2TR). For 1000 parts on 7"
reel, order AUIRL7732S2TR1
B
C
MAX
N.C
0.520
N.C
0.724
0.567
0.606
IMPERIAL
H
MIN
330.0
20.2
12.8
1.5
100.0
N.C
12.4
11.9
STANDARD OPTION (QTY 4800)
CODE
A
B
C
D
E
F
G
H
MAX
N.C
13.2
N.C
18.4
14.4
15.4
MIN
12.992
0.795
0.504
0.059
3.937
N.C
0.488
0.469
METRIC
G
E
F
MIN
6.9
0.75
0.53
0.059
2.31
N.C
0.47
TR1 OPTION (QTY 1000)
MAX
N.C
12.8
N.C
13.50
12.01
MIN
177.77
19.06
13.5
1.5
58.72
N.C
11.9
METRIC
MAX
N.C
0.50
N.C
0.53
N.C
IMPERIAL
A
D
LOADED TAPE FEED DIRECTION
A
E
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
F
B
C
IMPERIAL
MIN
0.311
0.154
0.469
0.215
0.158
0.197
0.059
MAX
8.10
4.10
12.30
5.55
4.20
5.20
N.C
1.60
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
METRIC
DIMENSIONS
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
0.063
D
H
G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AUIRL7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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