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参数资料
| 型号： | AUIRL7732S2TR |
| 元件分类： | JFETs |
| 英文描述： | 14 A, 40 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3 |
| 文件页数： | 5/11页 |
| 文件大小： | 216K |
| 代理商： | AUIRL7732S2TR |
AUIRL7732S2TR/TR1
www.irf.com
3
Qualification standards can be found at International Rectifiers web site: http://www.irf.com
Exceptions to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
Qualification Information
SMALL-CAN
MSL1, 260°C
RoHS Compliant
Yes
ESD
Machine Model
Class M4 (+/- 425V)
AEC-Q101-002
Human Body Model
Class H1B (+/- 1000V)
AEC-Q101-001
Charged Device
Model
N/A
AEC-Q101-005
Moisture Sensitivity Level
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
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| AUIRL7736M2TR | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRL7736M2TR1 | 22 A, 40 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET |
| AUIRLR024NTRL | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| AUIRLU024N | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| AUIRLR024N | 17 A, 55 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
相关代理商/技术参数 |
参数描述 |
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| AUIRL7732S2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7736M2TR1 | 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| AUIRL7766M2TR1 | 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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