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参数资料
型号： AUIRL7732S2TR
元件分类： JFETs
英文描述： 14 A, 40 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET
封装： HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
文件页数： 4/11页
文件大小： 216K
代理商： AUIRL7732S2TR
AUIRL7732S2TR/TR1
2
www.irf.com
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with small
clip heatsink (still air)
Mounted on minimum footprint full size
board with metalized back and with small
clip heatsink (still air)
Notes
through are on page 11
D
S
G
Static Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
V(BR)DSS
Drain-to-Source Breakdown Voltage
40
–––
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
0.03
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
5.0
6.6
m
Ω
–––
7.5
10.5
VGS(th)
Gate Threshold Voltage
1.0
1.8
2.5
V
ΔVGS(th)/ΔTJ
Gate Threshold Voltage Coefficient
–––
-7.1
–––
mV/°C
gfs
Forward Transconductance
64
–––
S
RG
Gate Resistance
–––
0.64
–––
Ω
IDSS
Drain-to-Source Leakage Current
–––
5
μA
–––
250
IGSS
Gate-to-Source Forward Leakage
–––
100
Gate-to-Source Reverse Leakage
–––
-100
Dynamic Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max. Units
Qg
Total Gate Charge
–––
22
33
Qgs1
Pre-Vth Gate-to-Source Charge
–––
3.3
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
2.8
–––
nC
Qgd
Gate-to-Drain ("Miller") Charge
–––
13
–––
Qgodr
Gate Charge Overdrive
–––
2.9
–––
Qsw
Switch Charge (Qgs2 + Qgd)
–––
15.8
–––
Qoss
Output Charge
–––
13
–––
nC
td(on)
Turn-On Delay Time
–––
21
–––
tr
Rise Time
–––
123
–––
ns
td(off)
Turn-Off Delay Time
–––
22
–––
tf
Fall Time
–––
37
–––
Ciss
Input Capacitance
–––
2020
–––
Coss
Output Capacitance
–––
410
–––
Crss
Reverse Transfer Capacitance
–––
210
–––
pF
Coss
Output Capacitance
–––
1460
–––
Coss
Output Capacitance
–––
365
–––
Coss eff.
Effective Output Capacitance
–––
630
–––
Diode Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Min.
Typ.
Max.
Units
IS
Continuous Source Current
(Body Diode)
A
ISM
Pulsed Source Current
(Body Diode)
g
VSD
Diode Forward Voltage
–––
1.3
V
trr
Reverse Recovery Time
–––
23
35
ns
Qrr
Reverse Recovery Charge
–––
16
24
nC
VGS = 4.5V, ID = 29A i
p-n junction diode.
MOSFET symbol
Conditions
VGS = 0V
VDS = 25V
showing the
integral reverse
VDS = 20V
VGS = 16V
VGS = 0V, VDS = 1.0V, f=1.0MHz
VGS = 0V, VDS = 32V, f=1.0MHz
See Fig.11
Conditions
nA
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 35A i
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = -16V
VDS = 10V, ID = 35A
IF = 35A, VDD = 20V
di/dt = 100A/μs
i
IS = 35A, VGS = 0V i
VGS = 4.5V
VDS = 16V, VGS = 0V
VDD = 20V, VGS = 4.5Vi
ID = 35A
RG = 6.8
Ω
= 1.0MHz
VGS = 0V, VDS = 0V to 32V
VDS = VGS, ID = 50μA
ID = 35A
–––
58
230
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相关代理商/技术参数
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AUIRL7732S2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRL7736M2TR 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
AUIRL7736M2TR1 功能描述:MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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AUIRL7766M2TR1 功能描述:MOSFET 100V AUTO GRADE 1 N-CH HEXFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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